Cylindrical sputtering target and method for manufacturing same
US-2016056025-A1 · Feb 25, 2016 · US
Manufacturing method of cylindrical sputtering target material
US2016194749A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016194749-A1 |
| Application number | US-201514911236-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 20, 2015 |
| Priority date | Apr 11, 2014 |
| Publication date | Jul 7, 2016 |
| Grant date | — |
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Abstract
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A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 μm to 150 μm and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.
First claim
Opening claim text (preview).
1 . A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy, the method comprising: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot or a cylindrical worked material obtained by working the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 μm to 150 μm and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area. 2 . The manufacturing method of a cylindrical sputtering target material according to claim 1 , wherein a tube expansion step of increasing an outer diameter of the cylindrical ingot or the cylindrical worked material in a range exceeding 0% and equal to or smaller than 30% and changing a sectional area after the cold working to be in a range of −10% to +10% of a sectional area before the cold working is performed at least once as the cold working step. 3 . The manufacturing method of a cylindrical sputtering target material according to claim 1 , wherein a heat treatment temperature is from 400° C. to 900° C. and the maintaining time in the range of the heat treatment temperature is in a range of 15 minutes to 120 minutes in the heat treatment step. 4 . The manufacturing method of a cylindrical sputtering target material according to claim 2 , wherein a heat treatment temperature is from 400° C. to 900° C. and the maintaining time in the range of the heat treatment temperature is in a range of 15 minutes to 120 minutes in the heat treatment step.
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Classifications
Shape · CPC title
- C23C14/3414Primary
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
during manufacturing of tubular bodies · CPC title
Alloys based on copper · CPC title
Copper alloys · CPC title
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- What does patent US2016194749A1 cover?
- A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repea…
- Who is the assignee on this patent?
- Mitsubishi Materials Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jul 07 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).