Vacuum ion sputtering target device

Patent metadata

Field	Value
Publication number	US-2016155618-A1
Application number	US-201414416150-A
Country	US
Kind code	A1
Filing date	Dec 8, 2014
Priority date	Dec 2, 2014
Publication date	Jun 2, 2016
Grant date	—

Abstract

A vacuum ion sputtering target device is disclosed, which has an accommodating space provided with a substrate, a magnetron, a target, and a back plate disposed therein. The target is disposed above the back plate, the magnetron is provided below the back plate, the substrate is disposed above the target; wherein a shape of the target depends on a distribution of a magnetic field strength. Target utilization is quiet high, and there is basically no target remaining, so costs will be reduced.

First claim

What is claimed is:

1 . A vacuum ion sputtering target device, comprising: an accommodating space provided with a substrate, a magnetron, a target, and a back plate therein, the target being disposed above the back plate, the magnetron being provided below the back plate, the substrate being disposed above the target; wherein a shape of the target depends on a distribution of a magnetic field strength; wherein the target has a greater thickness in a region corresponding to a higher magnetic field strength, the target has a smaller thickness in a region corresponding to a lower magnetic field strength; the target is an integrally molded structure;
wherein during a vacuum sputtering process, the magnetron generates a magnetic field between the target and the substrate, when the accommodating space is provided with plasma, the plasma accelerated in the electric field hits the target, and sputters a large number of target atoms, the target atoms are deposited on the substrate to form a thin film.

2 . The vacuum ion sputtering target device as claimed in claim 1 , wherein when the distribution of the magnetic field strength shows a wavy shape, a lower surface of the target shows the wavy shape, an upper surface of the back plate shows the wavy shape, and a peak at the lower surface of the target matches to a valley at the upper surface of the back plate, so that the target and the back plate are closely combined.

3 . The vacuum ion sputtering target device as claimed in claim 2 , wherein the lower surface of the target shows the wavy shape having two peaks, and the upper surface of the back plate shows the wavy shape having two valleys; the two peaks at the lower surface of the target are embedded in the two valleys at the upper surface of the back plate, so that the target and the back plate are closely combined.

4 . The vacuum ion sputtering target device as claimed in claim 2 , wherein the upper surface of the target is a flat plane.

5 . The vacuum ion sputtering target device as claimed in claim 2 , wherein the wavy shape at the lower surface of the target is symmetrically disposed.

6 . The vacuum ion sputtering target device as claimed in claim 1 , wherein the thickness and a size of the target depend on actual consumption.

7 . The vacuum ion sputtering target device as claimed in claim 1 , wherein the target is a metal target, including: titanium target (Ti), aluminum target (Al), stannum target (Sn), hafnium target (HO, lead target (Pb), nickel target (Ni), silver target (Ag), selenium target (Se), beryllium target (Be), tellurium target (Te), carbon target (C), vanadium target (V), antimony target (Sb), indium target (In), boron target (B), tungsten target (W), manganese target (Mn), bismuth target (Bi), copper target (Cu), silicon target (Si), tantalum target (Ta), zinc target (Zn), magnesium target (Mg), zirconium target (Zr), chromium target (Cr), stainless steel target (SS), niobium target (Nb), molybdenium target (Mo), cobalt target (Co), iron target (Fe), or germanium target (Ge).

8 . The vacuum ion sputtering target device as claimed in claim 1 , wherein the target is an alloy target, including: iron-cobalt target (FeCo), aluminum-silicon target (AlSi), titanium-silicon target (TiSi), chrome-silicon target (CrSi), zinc-aluminum target (ZnAl), titanium-zinc target (TiZn), titanium-aluminum target (TiAl), titanium-zirconium target (TiZr), titanium-silicon target (TiSi), nickel-titanium target (TiNi), nickel-chromium target (NiCr), nickel-aluminum target (NiAl), nickel-vanadium target (NiV), or nickel-iron target (NiFe).

9 . A vacuum ion sputtering target device, comprising: an accommodating space provided with a substrate, a magnetron, a target, and a back plate therein, the target being disposed above the back plate, the magnetron being provided below the back plate, the substrate being disposed above the target; wherein a shape of the target shape depends on a distribution of a magnetic field strength;
wherein during a vacuum sputtering process, the magnetron generates a magnetic field between the target and the substrate, when the accommodating space is provided with plasma, the plasma accelerated in the electric field hits the target, and sputters a large number of target atoms, the target atoms deposited on the substrate to form a thin film.

10 . The vacuum ion sputtering target device as claimed in claim 9 , wherein the target has a greater thickness in a region corresponding to a higher magnetic field strength, the target has a smaller thickness in a region corresponding to a lower magnetic field strength.

11 . The vacuum ion sputtering target device as claimed in claim 9 , wherein when the distribution of the magnetic field strength shows a wavy shape, a lower surface of the target shows the wavy shape, an upper surface of the back plate shows the wavy shape, a peak at the lower surface of the target matches to a valley at the upper surface of the back plate, so that the target and the back plate are closely combined.

12 . The vacuum ion sputtering target device as claimed in claim 11 , wherein the lower surface of the target shows the wavy shape having two peaks, and the upper surface of the back plate shows the wavy shape having two valleys; the two peaks at the lower surface of the target are embedded in the two valleys at the upper surface of the back plate, so that the target and the back plate are closely combined.

13 . The vacuum ion sputtering target device as claimed in claim 11 , wherein an upper surface of the target is a flat plane.

14 . The vacuum ion sputtering target device as claimed in claim 11 , wherein the wavy shape at the lower surface of the target is symmetrically disposed.

15 . The vacuum ion sputtering target device as claimed in claim 9 , wherein the thickness and a size of the target depend on actual consumption.

16 . The vacuum ion sputtering target device as claimed in claim 9 , wherein the target is a metal target, including: titanium target (Ti), aluminum target (Al), stannum target (Sn), hafnium target (Hf), lead target (Pb), nickel target (Ni), silver target (Ag), selenium target (Se), beryllium target (Be), tellurium target (Te), carbon target (C), vanadium target (V), antimony target (Sb), indium target (In), boron target (B), tungsten target (W), manganese target (Mn), bismuth target (Bi), copper target (Cu), silicon target (Si), tantalum target (Ta), zinc target (Zn), magnesium target (Mg), zirconium target (Zr), chromium target (Cr), stainless steel target (SS), niobium target (Nb), molybdenium target (Mo), cobalt target (Co), iron target (Fe), or germanium target (Ge).

17 . The vacuum ion sputtering target device as claimed in claim 9 , wherein the target is an alloy target, including: iron-cobalt target (FeCo), aluminum-silicon target (AlSi), titanium-silicon target (TiSi), chrome-silicon target (CrSi), zinc-aluminum target (ZnAl), titanium-zinc target (TiZn), titanium-aluminum target (TiAl), titanium-zirconium target (TiZr), titanium-silicon target (TiSi), nickel-titanium target (TiNi), nickel-chromium target (NiCr), nickel-aluminum target (NiAl), nickel-vanadium target (NiV), or nickel-iron target (NiFe).

18 . The vacuum ion sputtering target device as claimed in claim 9 , wherein the target is an integrally molded structure.

Assignees

• Shenzhen China Star Optoelect

Inventors

• Zhou Tao

Classifications

• H01J37/3405

  Magnetron sputtering · CPC title

• H01J37/3426

  Material · CPC title

• H01J37/3423 Primary

  Shape · CPC title

• H01J37/3408

  Planar magnetron sputtering · CPC title

• H01J37/3476

  Testing and control · CPC title