Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method
US-9631295-B2 · Apr 25, 2017 · US
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Patent family 46878894
This patent family groups 1 related publication across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 46878894 |
| Family type | — |
| Earliest priority | Mar 23, 2011 |
| First filing country | US |
| Member publications | 1 |
| Countries | US |
| Representative publication | US9631295B2 — Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method |
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US9631295B2 — Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method (published Apr 25, 2017)
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