Etching method and bevel etching apparatus

Patent metadata

Field	Value
Publication number	US-9623516-B2
Application number	US-201514729131-A
Country	US
Kind code	B2
Filing date	Jun 3, 2015
Priority date	Jun 9, 2014
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

An etching method using a bevel etching apparatus is provided. The bevel etching apparatus is configured to etch a substrate by emitting a laser beam and includes a laser generator and a power meter configured to measure the laser beam output from the laser generator. In the method, the power meter is irradiated with the laser beam for a predetermined period of time before etching the substrate by irradiating the substrate with the laser beam. An output value of the laser beam is measured by the power meter. It is determined whether the measured output value of the laser beam is in a range of predetermined thresholds with respect to an output setting value of the laser beam output from the laser generator.

First claim

What is claimed is:

1. An etching method using a bevel etching apparatus configured to etch a substrate by emitting a laser beam and including a laser generator, a laser irradiation head, and a power meter configured to measure the laser beam output from the laser generator, the method comprising steps of:
moving the laser irradiation head from a first position, at which the laser beam can irradiate the substrate, to a second position, at which the laser beam cannot irradiate the substrate;
irradiating the power meter with the laser beam for two to ten seconds at the second position;
measuring an output value of the laser beam by the power meter;
determining whether the measured output value of the laser beam is in a range of predetermined thresholds with respect to an output setting value of the laser beam output from the laser generator;
returning the laser irradiation head to the first position to irradiate the substrate with the laser beam, whereby the substrate is etched.

2. The method as claimed in claim 1 , wherein the range of the predetermined thresholds is in a range of −10% to +10%.

3. The method as claimed in claim 1 , further comprising a step of:
automatically correcting the output value of the laser beam output from the laser generator upon determining that the measured output value of the laser beam is out of the range of the predetermined thresholds.

4. The method as claimed in claim 1 , further comprising a step of:
performing a predetermined error process upon determining that the measured output value of the laser beam is out of the range of the predetermined thresholds.

5. The method as claimed in claim 4 , wherein the error process comprises at least one of a step of outputting an alarm and a step of stopping an operation of the bevel etching apparatus.

Assignees

• Tokyo Electron Ltd

Inventors

• Kondo Masaki

Classifications

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P74/00

  Testing or measuring during manufacture or treatment of wafers, substrates or devices · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0604 Primary

  Process monitoring, e.g. flow or thickness monitoring · CPC title