Deposition of low fluorine tungsten by sequential CVD process

Patent metadata

Field	Value
Publication number	US-9613818-B2
Application number	US-201514723270-A
Country	US
Kind code	B2
Filing date	May 27, 2015
Priority date	May 27, 2015
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

Provided herein are methods of depositing bulk tungsten by sequential CVD pulses, such as by alternately pulsing tungsten hexafluoride and hydrogen gas in cycles of temporally separated pulses. Some methods include depositing a tungsten nucleation layer at low pressure followed by deposition of bulk tungsten by sequential CVD to form low stress tungsten films with low fluorine content. Methods described herein may also be performed in combination with non-sequential CVD deposition and fluorine-free tungsten deposition techniques.

First claim

What is claimed is:

1. A method of filling a feature comprising:
(a) exposing a substrate in a chamber to alternating pulses of a reducing agent and a first tungsten-containing precursor to deposit a tungsten nucleation layer on the substrate; and
(b) exposing the substrate to alternating pulses of hydrogen and a second tungsten-containing precursor to deposit a bulk tungsten layer over the tungsten nucleation layer,
wherein the chamber pressure during (a) is no more than 10 Torr.

2. The method of claim 1 , further comprising, (c) exposing the substrate to another reducing agent and a third tungsten-containing precursor simultaneously to deposit a second bulk tungsten layer.

3. The method of claim 2 , further comprising, (d) performing (c) every 2 or more cycles of (b), wherein a cycle of (b) comprises a pulse of hydrogen and a pulse of the second tungsten-containing precursor.

4. The method of claim 1 , wherein (b) is performed in cycles comprising a pulse of hydrogen and a pulse of the second tungsten-containing precursor, and each cycle forms a submonolayer having a thickness of at least about 0.3 Å.

5. The method of claim 1 , wherein the first tungsten-containing precursor in (a) is different from the second tungsten-containing precursor in (b).

6. The method of claim 5 , wherein the tungsten-containing precursor in (a) is fluorine-free.

7. The method of claim 1 , wherein the deposited tungsten has a tensile stress less than about 1 GPa per 500 Å deposited.

8. The method of claim 1 , wherein exposing the substrate to the alternating pulses of the hydrogen and the second tungsten-containing precursor to deposit the bulk tungsten layer comprises a non-self-limiting reaction between the hydrogen and the second tungsten-containing precursor.

9. A method of filling a feature comprising:
(a) exposing the substrate to alternating pulses of hydrogen and a first tungsten-containing precursor to deposit a bulk tungsten layer over the substrate; and
(b) exposing the substrate to a second tungsten-containing precursor and a reducing agent simultaneously to deposit a second bulk tungsten layer over the substrate.

10. The method of claim 9 , wherein (a) and (b) are repeated sequentially.

11. The method of claim 9 , wherein the second tungsten-containing precursor in (b) is a fluorine-free tungsten-containing precursor selected from the group consisting of metal-organic tungsten-containing precursors, tungsten chlorides, and tungsten hexacarbonyl.

12. The method of claim 9 , wherein the first tungsten-containing precursor in (a) is different from the second tungsten-containing precursor in (b).

Assignees

• Lam Res Corp

Inventors

• Ba Xiaolan
• Humayun Raashina
• Danek Michal
• Schloss Lawrence

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title