Self-aligned contact metallization for reduced contact resistance
US-9224735-B2 · Dec 29, 2015 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/20 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 1,120 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 105 |
| 2016 | 151 |
| 2017 | 226 |
| 2018 | 180 |
| 2019 | 154 |
| 2020 | 128 |
| 2021 | 70 |
| 2022 | 51 |
| 2023 | 24 |
| 2024 | 25 |
| 2025 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of forming a reduced resistance fin structure
US-2015364578-A1 · Dec 17, 2015 · US
Ohmic contact to semiconductor device
US-9214352-B2 · Dec 15, 2015 · US
Field effect transistor with conduction band electron channel and uni-terminal response
US-9209180-B2 · Dec 8, 2015 · US
Method of Producing a III-V Fin Structure
US-2015340503-A1 · Nov 26, 2015 · US
Fin field effect transistor including self-aligned raised active regions
US-9196711-B2 · Nov 24, 2015 · US
Vertical Nanowire Semiconductor Structures
US-2015333122-A1 · Nov 19, 2015 · US
Spin polarization transistor element
US-9190500-B2 · Nov 17, 2015 · US
Semiconductor devices including an electrically-decoupled fin and methods of forming the same
US-2015325436-A1 · Nov 12, 2015 · US
Composite Device with Integrated Diode
US-2015325566-A1 · Nov 12, 2015 · US
Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element
US-9184235-B2 · Nov 10, 2015 · US
Method of producing semiconductor wafer, and semiconductor wafer
US-9184240-B2 · Nov 10, 2015 · US
Nanoscale chemical templating with oxygen reactive materials
US-2015318352-A1 · Nov 5, 2015 · US
P-type semiconductor material and semiconductor device
US-9159793-B2 · Oct 13, 2015 · US
Semiconductor devices comprising a fin
US-9153657-B2 · Oct 6, 2015 · US
Techniques for Fabricating Reduced-Line-Edge-Roughness Trenches for Aspect Ratio Trapping
US-2015279696-A1 · Oct 1, 2015 · US
Method To Form Dual Channel Group III-V And Si/Ge FINFET CMOS And Integrated Circuit Fabricated Using The Method
US-2015270289-A1 · Sep 24, 2015 · US
Methods of Forming Semiconductor Devices and FinFET Devices, and FinFET Devices
US-2015255545-A1 · Sep 10, 2015 · US
Method to form dual channel group III-V and Si/Ge FINFET CMOS
US-9129863-B2 · Sep 8, 2015 · US
Method To Form Group III-V And Si/Ge FINFET On Insulator And Integrated Circuit Fabricated Using The Method
US-2015249100-A1 · Sep 3, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/20?
- CPC H01L29/20 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/20 (Electricity)?
- Our database includes 1,120 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/20 growing?
- Publication counts under this code: 25 in 2024 vs 6 in 2025 (latest complete years).