Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device

US9551933B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9551933-B2
Application numberUS-201514605631-A
CountryUS
Kind codeB2
Filing dateJan 26, 2015
Priority dateJul 27, 2012
Publication dateJan 24, 2017
Grant dateJan 24, 2017

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Abstract

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There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the first specific formula and a repeating unit represented by the second specific formula, wherein the content of the repeating unit represented by the first specific formula is 35 mol % or more based on all repeating units in the resin (A), a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition.

First claim

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The invention claimed is: 1. An actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the following formula (1-1), a repeating unit represented by the following formula (1-2) and a repeating unit having a lactone structure, and a compound capable of generating an acid upon irradiation with an actinic ray or radiation, wherein the content of the repeating unit represented by the following formula (1-1) is 55 mol % or more based on all repeating units in the resin (A): wherein in formula (1-1), R 1 represents an alkyl group or a cycloalkyl group, which may have a substituent, R 2 represents an alkyl group or a cycloalkyl group, R 3 represents a hydrogen atom or an alkyl group, R 1 and R 2 may combine to form a ring, Ra represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom, and L 1 represents a single bond or a divalent linking group; in formula (1-2), R 4 represents a substituent, n 1 represents 1 or 2, n 2 represents an integer of 0 to 4, L 2 represents a single bond, —COO— or —CONR 5 —, and R 5 represents a hydrogen atom or an alkyl group. 2. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein Ra in formula (1-1) is a methyl group. 3. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein L 1 in formula (1-1) is a single bond. 4. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein the content of the repeating unit represented by formula (1-2) is at least 15 mol % based on all repeating units in the resin (A). 5. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein the repeating unit represented by formula (1-1) is a repeating unit represented by the following formula (1-11): wherein R 2 , R 3 , L 1 and Ra have the same meanings as R 2 , R 3 , L 1 and Ra in formula (1-1), R 11 represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an acyl group or a heterocyclic group, and R 11 and R 2 may combine to form a ring. 6. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 5 , wherein the repeating unit represented by formula (1-11) is a repeating unit represented by the following formula (1-12): wherein in formula (1-12), R 2 , R 3 , L 1 and Ra have the same meanings as R 2 , R 3 , L 1 and Ra in formula (1-1), each of R 21 to R 23 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group, each of at least two members of R 21 to R 23 independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group, and at least two of R 21 to R 23 may combine with each other to form a ring, or at least one of R 21 to R 23 may combine with R 2 to form a ring. 7. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein the repeating unit represented by formula (1-1) is a repeating unit represented by the following formula (1-13): wherein in formula (1-13), R 2 , R 3 , L 1 and Ra have the same meanings as R 2 , R 3 , L 1 and Ra in formula (1-1), each of R 24 to R 26 independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group, and at least two of R 24 to R 26 may combine with each other to form a ring, or at least one of R 24 to R 26 may combine with R 2 to form a ring. 8. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein the repeating unit having a lactone structure in the resin (A) is a repeating unit represented by formula (2), the content of the repeating unit represented by formula (1-1) is from 55 to 85 mol % based on all repeating units in the resin (A), the content of the repeating unit represented by formula (1-2) is from 20 to 45 mol % based on all repeating units in the resin (A), and the content of the repeating unit represented by formula (2) is from 1 to 40 mol % based on all repeating units in the resin (A): wherein in formula (2), each of L 3 and L 4 independently represents a single bond or a divalent linking group, Y represents an atomic group capable of forming a lactone structure, and Rb 0 represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom. 9. A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1 . 10. A pattern forming method comprising: (i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1 , (ii) a step of exposing the film, and (iii′) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern. 11. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein the composition further contains a hydrophobic resin. 12. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein in formula (1-2), L 2 represents —COO—. 13. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein in formula (1-2), n 1 represents 2. 14. A pattern forming method comprising: (i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1 , (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern. 15. The pattern forming method as claimed in claim 14 , wherein the exposure is performed using an X-ray, an electron beam or EUV. 16. A method for manufacturing an electronic device, comprising the pattern forming method claimed in claim 15 . 17. An actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the following formula (1-1), a repeating unit represented by the following formula (1-2) and a repeating unit having a lactone structure, and a compound capable of generating an acid upon irradiation with an actinic ray or radiation, wherein the content of the repeating unit represented by the following formula (1-1) is 40 mol % or more based on all repeating units in the resin (A): wherein in formula (1-1), R 1 represents an alkyl group or a cycloalkyl group, which may have a substituent, R 2 represents an alkyl group or a cycloalkyl group, R 3 represents a hydrogen atom or an alkyl group, R 1 and R 2 may combine to form a ring, Ra

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What does patent US9551933B2 cover?
There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the first specific formula and a repeating unit represented by the second specific formula, wherein the content of the repeating unit represented by the first specific formula is 35 mol % or more based on all repeating units in the resin (A), a r…
Who is the assignee on this patent?
Fujifilm Corp
What technology area does this patent fall under?
Primary CPC classification C08F212/24. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 24 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).