Resist composition, method of forming resist pattern, polymeric compound and compound
US-9017924-B2 · Apr 28, 2015 · US
US9291898B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9291898-B2 |
| Application number | US-201514605415-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 26, 2015 |
| Priority date | Jul 27, 2012 |
| Publication date | Mar 22, 2016 |
| Grant date | Mar 22, 2016 |
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There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having (a) a repeating unit represented by the specific formula; a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method; and an electronic device manufactured by the manufacturing method of an electronic device.
Opening claim text (preview).
The invention claimed is: 1. An actinic ray-sensitive or radiation-sensitive resin composition comprising: a compound capable of generating an acid upon irradiation with an actinic ray or radiation; a solvent; and (P) a resin having (a) a repeating unit represented by the following formula (1): wherein each of R 11 , R 12 and R 13 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group, R 12 may combine with L 11 to form a ring, and in this case, R 12 represents a single bond or an alkylene group; R 1 represents a hydrogen atom or an alkyl group; L 11 represents a single bond or a divalent linking group, and in the case of forming a ring with R 12 , L 11 represents a trivalent linking group; R represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an acyl group or a heterocyclic group; n1 represents an integer of 1 or more; M 1 represents a single bond or a divalent linking group; Q 1 represents an alkyl group, a cycloalkyl group, an aryl group or a heterocyclic group; when M 1 is a divalent linking group, Q 1 may combine with M 1 through a single bond or another linking group to form a ring; and the case where R combines with Q 1 or M 1 to form a ring is excluded. 2. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein R 1 is a hydrogen atom. 3. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein L 11 is a single bond, a group represented by —COO-L 1 - or a group represented by -L 2 -O—CH 2 — (wherein L 1 represents an alkylene group having a carbon number of 1 to 9, which may contain a heteroatom or a carbonyl bond, and L 2 represents an arylene group having a carbon number of 1 to 10. 4. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 3 , wherein L 11 is a single bond. 5. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein R in formula (1) is a group represented by —C(R 21 )(R 22 )(R 23 ) wherein each of R 21 to R 23 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group, and each of at least two members of R 21 to R 23 independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group, and at least two members of R 21 to R 23 may combine with each other to form a ring, with the provided excluding the case where at least one of R 21 to R 23 combines with M 1 or Q 1 to form a ring. 6. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 5 , wherein in formula (1), each of R 21 to R 23 is independently an alkyl group. 7. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein n1 in formula (1) is 1. 8. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein the resin (P) is a resin further containing a repeating unit represented by the following formula (5) or (6): wherein each of R 51 and R 61 independently represents a hydrogen atom or a methyl group, each of Ar 51 and Ar 61 independently represents an arylene group, and L 61 represents a single bond or an alkylene group. 9. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein the resin (P) is a resin further containing a repeating unit represented by the following formula (4): wherein R 41 represents a hydrogen atom or a methyl group, L 41 represents a single bond or a divalent linking group, L 42 represents a divalent linking group, and S represents a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid on the side chain. 10. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein R formula (1) is an alkyl group having a carbon number of 5 or more. 11. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein Q 1 in formula (1) is an aryl group. 12. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 , wherein Q 1 in formula (1) is an alkyl group having a carbon number of 6 or more. 13. A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1 . 14. A pattern forming method comprising (i) a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1 , (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern. 15. The pattern forming method as claimed in claim 14 , wherein the developer contains an organic solvent. 16. A method for manufacturing an electronic device, comprising (i) a step of forming a film on an inorganic substrate or a coating-type inorganic substrate suitable for use in a process of producing a semiconductor, a liquid crystal device or a circuit board by using the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1 , (ii) a step of pattern-wise exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern on the inorganic substrate or coating-type inorganic substrate. 17. A resin comprising a repeating unit having a phenolic hydroxyl group represented by the following formula and a repeating unit represented by the following formula (1-2): wherein in formula (1-2), R 0 represents a hydrogen atom or a methyl group; each of R 21 to R 23 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group, and each of at least two members of R 21 to R 23 independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group; at least two of R 21 to R 23 may combine with each other to form a ring, with the proviso excluding the case where at least one of R 21 to R 23 combines with R 71 to form a ring; and R 71 represents an unsubstituted alkyl group, a cycloalkyl group-substituted alkyl group, a cycloalkyl group, an aralkyl group, an aryloxyalkyl group or a heterocyclic group. 18. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 17 , wherein the total number of the carbon numbers of R 21 to R 23 in formula (1-2) is 4 or more. 19. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 17 , wherein R 71 in formula (1-2) is an alkyl group having a carbon number of 6 or more.
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