Sapphire sheets and apparatus and method for producing sapphire sheets with angled heat shields

US9551089B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9551089-B2
Application numberUS-201414212285-A
CountryUS
Kind codeB2
Filing dateMar 14, 2014
Priority dateMar 15, 2013
Publication dateJan 24, 2017
Grant dateJan 24, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.

First claim

Opening claim text (preview).

What is claimed is: 1. An apparatus for growing a sapphire sheet via edge-defined film-fed growth (EFG), the apparatus comprising: a die; and a heat reflective shield including: a first face positioned to form a first angle with respect to a horizontal plane; and a second face positioned to form a second angle with respect to the horizontal plane, wherein: the first and second faces are not on a same plane; and the first and second faces of the heat reflective shield are positioned to control a first thermal gradient from reflected heat in a lateral direction and a vertical direction. 2. An apparatus for growing a sapphire sheet via edge-defined film-fed growth (EFG), the apparatus comprising: a die having a die tip; a heat reflective shield adapted to be disposed adjacent the die; a first region adjacent an opening of the die; and a second region above the first region and having a lower temperature than the first region, wherein the heat reflective shield comprises a first surface facing the die and a second surface opposite the first surface; and wherein the heat reflective shield is positioned to direct heat energy contacting the first surface of the heat reflective shield towards the second region, thereby increasing a first thermal gradient in the first region above the die relative to an apparatus having a heat shield parallel to the side surface of the die tip. 3. The apparatus of claim 1 , wherein the first angle, the second angle, or both are no greater than about 85 degrees. 4. The apparatus of claim 1 , wherein the first angle, the second angle, or both are no less than about 35 degrees. 5. The apparatus of claim 1 , wherein the heat reflective shield comprises a metal. 6. The apparatus of claim 1 , wherein the heat reflective shield comprises a refractory metal. 7. The apparatus of claim 1 , wherein the heat reflective shield has a surface angled with respect to the horizontal plane, and wherein a ratio of the length of the angled surface of the heat shield to the width of the sapphire sheet is less than about 2:1. 8. The apparatus of claim 1 , wherein the heat reflective shield is positioned such that a significant portion of heat radiating laterally from a first region is reflected toward an area having a lower temperature and above the first region. 9. The apparatus of claim 1 , wherein the heat reflective shield is disposed adjacent to the die. 10. The apparatus of claim 1 , wherein the first thermal gradient is at least about 1 degrees/mm. 11. The apparatus of claim 1 , wherein the first thermal gradient extends along the forming plane for a distance of at least about 3 cm. 12. The apparatus of claim 1 , further comprising a second thermal gradient adjacent to the first thermal gradient, wherein the second thermal gradient is further away from the die than the first thermal gradient, and wherein the second thermal gradient is less than the first thermal gradient. 13. The apparatus of claim 1 , wherein the die has an opening having a width of at least 1 inch. 14. The apparatus of claim 1 , wherein the die has an opening having a thickness of at least 0.1 mm. 15. The apparatus of claim 1 , wherein the apparatus is adapted to grow a sapphire sheet having a ratio of an average thickness of the sapphire sheet to a thickness of a die opening of at least about 0.95:1 across an entire width and over a length of at least 10 cm of the sapphire sheet. 16. The apparatus of claim 2 , wherein the heat reflective shield comprises: a first face comprising the first surface facing the die and the second surface opposite the first surface, and a second face comprising a third surface facing the die and a fourth surface opposite the third surface, wherein the heat reflective shield is positioned such that heat energy contacting the third surface of the second face is directed towards the second region.

Assignees

Inventors

Classifications

  • Aluminium oxide; Aluminium hydroxide; Aluminates · CPC title

  • Longitudinally varying · CPC title

  • C30B15/34Primary

    Edge-defined film-fed crystal-growth using dies or slits · CPC title

  • Aluminium oxides · CPC title

  • including means forming a flat shape [e.g., ribbon] · CPC title

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Frequently asked questions

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What does patent US9551089B2 cover?
The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.
Who is the assignee on this patent?
Saint-Gobain Ceram & Plastics Inc
What technology area does this patent fall under?
Primary CPC classification C30B15/34. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 24 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).