Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
US-2015380500-A1 · Dec 31, 2015 · US
β-Ga2O3-based single crystal substrate
US9431489B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9431489-B2 |
| Application number | US-201514634407-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 27, 2015 |
| Priority date | Jun 30, 2014 |
| Publication date | Aug 30, 2016 |
| Grant date | Aug 30, 2016 |
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Abstract
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A β-Ga 2 O 3 -based single crystal substrate includes an average dislocation density of less than 7.31×10 4 cm −2 . The average dislocation density may be not more than 6.14×10 4 cm −2 . The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.
First claim
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What is claimed is: 1. A β-Ga 2 O 3 -based single crystal substrate including a main surface parallel to a b-axis, the β-Ga 2 O 3 -based single crystal substrate comprising: an average dislocation density on the main surface of not less than 7.52×10 3 cm −2 and less than 7.31×10 4 cm −2 , wherein the substrate is free from any twinned crystal, and wherein the substrate has a diameter of not less than 2 inches. 2. The β-Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the average dislocation density is not more than 6.14×10 4 cm −2 . 3. The β-Ga 2 O 3 -based single crystal substrate according to claim 2 , wherein a plane orientation of the main surface is (−201), (101) or (001). 4. The β-Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein a plane orientation of the main surface is (−201), (101) or (001). 5. A β-Ga 2 O 3 -based single crystal substrate including a main surface parallel to a b-axis, the β-Ga 2 O 3 -based single crystal substrate comprising: an average dislocation density on the main surface of not less than 7.52×10 3 cm −2 and less than 6.14×10 4 cm −2 , wherein the substrate further comprises a region free from any twinning plane, and wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and the main surface. 6. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , wherein a plane orientation of the main surface is (−201), (101), or (001). 7. A β-Ga 2 O 3 -based single crystal substrate including a main surface parallel to a b-axis, the β-Ga 2 O 3 -based single crystal substrate comprising: an average dislocation density on the main surface of not less than 6.14×10 4 cm −2 and less than 7.31×10 4 cm −2 , wherein the substrate further comprises a region free from any twinning plane, and wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and a main surface. 8. The β-Ga 2 O 3 -based single crystal substrate according to claim 7 , wherein a plane orientation of the main surface is (−201), (101) or (001).
Assignees
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Classifications
N-type · CPC title
Nitrides · CPC title
Nitrides · CPC title
being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title
using chemical vapour deposition [CVD] · CPC title
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Frequently asked questions
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- What does patent US9431489B2 cover?
- A β-Ga 2 O 3 -based single crystal substrate includes an average dislocation density of less than 7.31×10 4 cm −2 . The average dislocation density may be not more than 6.14×10 4 cm −2 . The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.
- Who is the assignee on this patent?
- Tamura Seisakusho Kk, Koha Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B29/16. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Aug 30 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).