Continuous sapphire growth

Patent metadata

Field	Value
Publication number	US-9777397-B2
Application number	US-201213631602-A
Country	US
Kind code	B2
Filing date	Sep 28, 2012
Priority date	Sep 28, 2012
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber, heating the crucible to melt the base material and initiating crystalline growth in the melted base material to create a crystal structure. Additionally, the method includes pulling the crystal structure away from crucible and feeding the crystal structure out of the growth chamber.

First claim

We claim:

1. A method comprising:
feeding a base material into a crucible located within a growth chamber;
heating the crucible to melt the base material;
initiating crystalline growth in the melted base material to create a crystal structure;
lifting a pulling system within the growth chamber to pull the crystal structure away from the crucible, the pulling system comprising rollers; and
after lifting the pulling system, engaging the rollers to feed the crystal structure out of the growth chamber.

2. The method of claim 1 , wherein feeding the crystal structure out of the growth chamber comprises opening a top of the growth chamber.

3. The method of claim 1 further comprising:
sensing a torque on the rollers pulling the crystal structure; and
adjusting a speed at which the crystal structure is pulled and fed out of the growth chamber based on the sensed torque.

4. The method of claim 1 further comprising cutting the crystal structure after it is fed out of the growth chamber.

5. The method of claim 4 , wherein the cutting step comprises a scribe and break process.

6. The method of claim 4 , wherein the cutting process comprises a laser cutting process.

7. The method of claim 4 , wherein the cutting process comprises:
an inspection of the crystal structure to find defects; and
excising the defective portions.

8. The method of claim 1 , wherein initiating crystal growth comprises lowering a seed crystal within the growth chamber to contact the base material.

9. The method of claim 1 further comprising supplying an inert gas into the growth chamber.

10. A system for continuous sapphire growth comprising:
a vertical growth chamber;
a crucible positioned within the growth chamber, the crucible comprising a die set and configured to hold molten alumina;
a heater configured to heat the crucible;
a feeding system for continuously feeding alumina into the crucible; and
a pulling system having a set of rollers attached thereto, the pulling system being vertically translatable within the growth chamber and configured to contact a seed crystal with molten alumina at the top of the die set, translate upward, and rotate the rollers to pull a crystal ribbon upwardly and out of the growth chamber.

11. The system of claim 10 , wherein the growth chamber comprises a convertible top that opens to allow the crystal ribbon to exit the growth chamber.

12. The system of claim 11 further comprising one or more sealing members for creating a seal when the convertible top is open.

13. The system of claim 10 , wherein the pulling system is located at the top of the growth chamber.

14. The system of claim 13 , wherein the pulling system comprises a plurality of rollers for pulling the crystal ribbon upwardly from the crucible and out of the growth chamber.

15. The system of claim 14 , wherein one or more of the plurality of rollers comprises a torque sensor.

16. The system of claim 10 further comprising an inspection unit outside of the growth chamber, wherein the inspection unit is configured to detect defects in the crystal ribbon.

17. The system of claim 16 , wherein the inspection unit comprises a light based inspection system.

18. The system of claim 16 further comprising a cutting mechanism, wherein the cutting mechanism comprises one of a mechanical cutter or a laser cutter.

Assignees

• Apple Inc

Inventors

• Memering Dale N
• Myers Scott A

Classifications

• C30B15/30

  Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B15/28) · CPC title

• Y10T117/106

  including sealing means details · CPC title

• Y10T117/1004

  with means for measuring, testing, or sensing · CPC title

• C30B15/005

  Simultaneous pulling of more than one crystal · CPC title

• Y10T225/12

  With preliminary weakening · CPC title