Tunneling nanotube field effect transistor and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9530977-B2
Application number	US-201414559408-A
Country	US
Kind code	B2
Filing date	Dec 3, 2014
Priority date	May 5, 2014
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

A tunneling nanotube field effect transistor includes: an insulating layer disposed on a substrate; a gate electrode disposed on the insulating layer; a source electrode and a drain electrode disposed on the insulating layer on respective adjacent sides of the gate electrode; and a carbon nanotube extending through the gate electrode, wherein the carbon nanotube is supported by the source electrode, the gate electrode, and the drain electrode, wherein the carbon nanotube includes a first portion adjacent to the source electrode and a second portion adjacent to the drain electrode, and wherein the source electrode and the gate electrode are spaced apart by an exposed section of the first portion, and the drain electrode and the gate electrode are spaced apart by an exposed section of the second portion.

First claim

What is claimed is:

1. A tunneling nanotube field effect transistor comprising:
an insulating layer disposed on a substrate;
a gate electrode disposed on the insulating layer;
a source electrode and a drain electrode disposed on the insulating layer on respective adjacent sides of the gate electrode;
a carbon nanotube extending through the gate electrode, wherein a gap between the carbon nanotube and the insulating layer ranges from about 1 nm to about 7 nm; and
a spacer disposed on the insulating layer on both sides of the gate electrode and surrounding the carbon nanotube,
wherein the carbon nanotube is supported by the source electrode, the gate electrode, and the drain electrode,
wherein the carbon nanotube includes a first portion adjacent to the source electrode and a second portion adjacent to the drain electrode,
wherein the source electrode and the gate electrode are spaced apart by an exposed section of the first portion, and the drain electrode and the gate electrode are spaced apart by an exposed section of the second portion, and
wherein a direction of electron tunneling across the carbon nanotube between the source electrode and the drain electrode is determined by a voltage applied to the gate electrode and conductivity types of the first portion and second portion of the carbon nanotube.

2. The tunneling nanotube field effect transistor according to claim 1 , wherein the carbon nanotube has a diameter of about 1 nm to about 3 nm.

3. The tunneling nanotube field effect transistor according to claim 1 , wherein the source electrode, the gate electrode, and the drain electrode have circular cross-sections supporting and surrounding the corresponding portions of the carbon nanotube.

4. The tunneling nanotube field effect transistor according to claim 3 , wherein the exposed section of the first portion of the carbon nanotube is not surrounded by the gate electrode and the source electrode, and the exposed section of the second portion of the carbon nanotube is not surrounded by the gate electrode and the drain electrode.

5. The tunneling nanotube field effect transistor according to claim 1 , wherein the first portion of the carbon nanotube has a first conductivity type, and the second portion of the carbon nanotube has a second conductivity type different from the first conductivity type.

6. The tunneling nanotube field effect transistor according to claim 5 , wherein palladium (Pd) is introduced onto the first portion of the carbon nanotube so that the first portion has the first conductivity type, and calcium (Ca) is introduced onto the second portion of the carbon nanotube so that the second portion has the second conductivity type.

7. The tunneling nanotube field effect transistor according to claim 6 , wherein the source electrode is disposed on the first portion of the carbon nanotube, and the drain electrode is disposed on the second portion of the carbon nanotube.

8. The tunneling nanotube field effect transistor according to claim 6 , wherein the first portion of the carbon nanotube serves as a source region, and the second portion of the carbon nanotube serves as a drain region.

9. A tunneling field effect transistor comprising:
an insulating layer disposed on a substrate;
a gate electrode disposed on the insulating layer;
a source electrode and a drain electrode disposed on the insulating layer on respective adjacent sides of the gate electrode;
a carbon nanotube surrounded by the source electrode, the gate electrode, and the drain electrode, wherein a gap between the carbon nanotube and the insulating layer ranges from about 1 nm to about 7 nm; and
a spacer disposed on the insulating layer on both sides of the gate electrode and surrounding the carbon nanotube,
wherein a first portion of the carbon nanotube has a first conductivity type and serves as a source region, and a second portion of the carbon nanotube has a second conductivity type and serves as a drain region.

10. The tunneling field effect transistor according to claim 9 , wherein the source electrode and the gate electrode are spaced apart by an exposed section of the first portion of the carbon nanotube, and the drain electrode and the gate electrode are spaced apart by an exposed section of the second portion of the carbon nanotube.

11. The tunneling field effect transistor according to claim 9 , wherein the gate electrode, the source electrode, and the drain electrode are disposed on the insulating layer.

Assignees

• Semiconductor Mfg Int Shanghai Corp

Inventors

• Xiao Deyuan

Classifications

• H01L51/0512

  Electricity · mapped topic

• H01L51/055 Primary

  Electricity · mapped topic

• H01L51/0048

  Electricity · mapped topic

• H01L51/105

  Electricity · mapped topic

• H01L51/002

  Electricity · mapped topic