Printable nanoparticle conductor ink with improved charge injection

Patent metadata

Field	Value
Publication number	US-2016240803-A1
Application number	US-201514623826-A
Country	US
Kind code	A1
Filing date	Feb 17, 2015
Priority date	Feb 17, 2015
Publication date	Aug 18, 2016
Grant date	—

Abstract

A transistor has a substrate, source and drain electrodes on the substrate, the source and drain electrodes formed of a conductor ink having silver nanoparticles with integrated dipolar surfactants, an organic semiconductor forming a channel between the source and drain electrodes, the organic semiconductor in contact with the source and drain electrodes, a gate dielectric layer having a first surface in contact with the organic semiconductor, and a gate electrode in contact with a second surface of the gate dielectric layer, the gate electrode formed of silver nanoparticles with integrated dipolar surfactants.

First claim

1 . A transistor, comprising:
a substrate; source and drain electrodes on the substrate, the source and drain electrodes formed of a conductor ink having silver nanoparticles with integrated dipolar surfactants, wherein the integrated dipolar surfactants are selected to increase the work function of the silver nanoparticles; an organic semiconductor forming a channel between the source and drain electrodes, the organic semiconductor in contact with the source and drain electrodes; a gate dielectric layer having a first surface in contact with the organic semiconductor; and a gate electrode in contact with a second surface of the gate dielectric layer, the gate electrode formed of silver nanoparticles with integrated dipolar surfactants.

2 . The transistor of claim 1 , wherein the conductor ink comprises a silver nanoparticle ink formulated with alkyl amine surfactants.

3 . The transistor of claim 1 , wherein the gate dielectric and the gate electrode reside on top of the source and drain electrodes.

4 . The transistor of claim 1 , wherein the source and drain electrodes reside on top of the gate dielectric and the gate electrode.

5 . The transistor of claim 1 , wherein the integrated dipolar surfactant comprises one of alkyl amine, carboxylic acid, and thiol.

6 . The transistor of claim 1 , wherein the organic semiconductor comprises a p-type diketopyrrolopyrrole-based polymer.

7 . A method of manufacturing a transistor, comprising:
printing a conductor ink having silver nanoparticles with integrated dipolar surfactants to form source and drain electrodes, wherein the integrated dipolar surfactants increase the work function of the silver nanoparticles; forming a channel between the source and drain electrodes by printing an organic semiconductor, the organic semiconductor in contact with the source and drain electrodes; forming a layer of gate dielectric having a first surface, the first surface in contact with the source and drain electrodes; and printing the conductor ink to form a gate electrode in contact with a second surface of the gate dielectric.

8 . The method of claim 7 , wherein printing a conductor ink comprises printing a conductor ink with integrated dipolar surfactants, the integrated dipolar surfactants being one of alkyl amine, carboxylic acid, and thiol.

9 . The method of claim 7 , wherein forming a channel comprises printing a p-type diketopyrrolopyrrole-based polymer.

10 . The method of claim 7 , wherein forming a gate electrode occurs prior to the printing of the source and drain electrodes.

11 . The method of claim 7 , wherein forming a gate electrode occurs after the printing of the source and drain electrodes.

12 . The method of claim 7 , further comprising modifying the surfaces of the source and gate electrodes to remove the integrated bipolar surfactants, and wherein forming the organic semiconductor comprises printing an n-type semiconductor.

Assignees

• Xerox Corp
• Palo Alto Res Ct Inc

Inventors

• Ng Tse Nga
• Mei Ping
• Wu Yiliang
• Abraham Biby Esther

Classifications

• H01L51/0004

  Electricity · mapped topic

• H01L51/105 Primary

  Electricity · mapped topic

• H01L51/0022

  Electricity · mapped topic

• H01L51/055

  Electricity · mapped topic

• H10K10/464

  Lateral top-gate IGFETs comprising only a single gate · CPC title