Electronic device having thin film transistor using organic semiconductor and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9466796-B2
Application number	US-201514658563-A
Country	US
Kind code	B2
Filing date	Mar 16, 2015
Priority date	Mar 19, 2014
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

According to one embodiment, there is provided a manufacturing method of an electronic device including a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material on a substrate, an organic semiconductor layer between the source and drain electrodes, and a gate electrode on the organic semiconductor layer via a gate insulating layer. The manufacturing method includes forming a nonphotosensitive resin layer as the gate insulating layer on the organic semiconductor layer and on the lower electrode, forming a photosensitive resin layer as the gate insulating layer on the nonphotosensitive resin layer, and forming a through hole in the photosensitive resin layer on the lower electrode.

First claim

What is claimed is:

1. A manufacturing method of an electronic device comprising a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material on a substrate, comprising an organic semiconductor layer between the source electrode and the drain electrode, and comprising a gate electrode on the organic semiconductor layer via a gate insulating layer, the method comprising:
forming a non-photosensitive resin layer as the gate insulating layer on the organic semiconductor layer and the lower electrode;
forming a photosensitive resin layer as the gate insulating layer on the non-photosensitive resin layer;
forming a through hole in the photosensitive resin layer on the lower electrode, and
forming the gate electrode on the photosensitive resin layer on the non-photosensitive resin layer on the organic semiconductor layer between the source electrode and the drain electrode without removing the photosensitive resin layer.

2. The method according to claim 1 ,
wherein the forming of the through hole comprises steps of exposing, developing and curing the photosensitive resin layer.

3. The method according to claim 1 ,
wherein the forming of the lower electrode, the source electrode and the drain electrode comprises:
forming a lyophobic layer on a resin layer which is present on the substrate, and patterning the lyophobic layer; and
making the resin layer lyophilic by use of the lyophobic layer as a mask, and then printing with a conductive ink on the resin layer to form the lower electrode, the source electrode and the drain electrode.

4. The method according to claim 1 ,
wherein the photosensitive resin layer has a photoacid generator which generates an acid when irradiated with light.

5. The method according to claim 4 ,
wherein the photoacid generator includes at least one of a triarylsulfonium salt series, naphthalene imide series, thioxanthone derivatives, triazines, nitrobenzylesters, diazomethanes and onium salts.

6. The method according to claim 1 ,
wherein the nanoparticulate conductive material includes Ag nanoparticles.

7. A manufacturing method of an electronic device comprising a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material on a substrate, comprising an organic semiconductor layer between the source electrode and the drain electrode, and comprising a gate electrode on the organic semiconductor layer via a gate insulating layer, the method comprising:
forming a non-photosensitive resin layer as the gate insulating layer on the organic semiconductor layer and the lower electrode;
forming a photosensitive resin layer as the gate insulating layer on the non-photosensitive resin layer;
forming a through hole in the photosensitive resin layer on the lower electrode;
forming a lyophobic layer on the photosensitive resin layer and on the non-photosensitive resin layer, after the through hole is formed in the photosensitive resin layer;
patterning the lyophobic layer to remove the lyophobic layer in a region where the gate electrode and the upper electrode are to be formed, and to remove the non-photosensitive resin layer in a bottom portion of the through hole together with the lyophobic layer; and
printing with a conductive ink on the photosensitive resin layer, in the through hole and on the lyophobic layer, to form the gate electrode and to form the upper electrode on the photosensitive resin layer which is present on the lower electrode.

8. The method according to claim 7 ,
wherein the lyophobic layer is formed by subjecting a fluorine-containing gas to discharge decomposition.

9. The method according to claim 7 ,
wherein the patterning of the lyophobic layer is performed by laser abrasion.

10. An electronic device comprising:
a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material formed on a substrate;
an organic semiconductor layer formed between the source electrode and the drain electrode;
a gate insulating layer comprising a non-photosensitive resin layer formed on the organic semiconductor layer and on the lower electrode, and a photosensitive resin layer formed on the non-photosensitive resin layer;
a gate electrode formed on the photosensitive resin layer on the non-photosensitive resin layer on the organic semiconductor layer between the source electrode and the drain electrode;
an upper electrode formed on the photosensitive resin which is present on the lower electrode; and
a conductive film formed in the gate insulating layer on the lower electrode to electrically connect the lower electrode to the upper electrode.

11. The electronic device according to claim 10 ,
wherein the photosensitive resin layer has a photoacid generator which generates an acid when irradiated with light.

12. The electronic device according to claim 11 ,
wherein the photoacid generator includes at least one of a triarylsulfonium salt series, naphthalene imide series, thioxanthene derivatives, triazines, nitrobenzylesters, diazomethanes and onium salts.

13. The electronic device according to claim 10 ,
wherein the upper electrode comprises a nanoparticulate conductive material.

14. The electronic device according to claim 13 ,
wherein the nanoparticulate conductive material comprises Ag nanoparticles.

15. The electronic device according to claim 10 ,
wherein the upper electrode is a conducive pattern formed by patterning a lyophobic layer on the gate insulating layer to form a lyophobic/lyophilic pattern on the surface of the gate insulating layer, and applying a conductive ink to the lyophobic/lyophilic pattern.

Assignees

• Toshiba Kk

Inventors

• Akiyama Masahiko

Classifications

• H01L51/0035

  Electricity · mapped topic

• H01L51/055

  Electricity · mapped topic

• H01L51/0022 Primary

  Electricity · mapped topic

• C08G2261/92

  TFT applications · CPC title

• H01L51/0541

  Electricity · mapped topic