Solar cell

Patent metadata

Field	Value
Publication number	US-9520517-B2
Application number	US-201414542206-A
Country	US
Kind code	B2
Filing date	Nov 14, 2014
Priority date	Sep 14, 2009
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A solar cell including a non-amorphous semiconductor substrate of a first conductive type; at least a first semiconductor layer on the non-amorphous semiconductor substrate, the first semiconductor layer including a portion that is amorphous and a plurality of portions having crystal lumps, so that the plurality of portions having the crystal lumps are distributed in the first semiconductor layer; a first electrode on the semiconductor substrate; and a second electrode on the semiconductor substrate.

First claim

What is claimed is:

1. A solar cell, comprising:
a single crystalline silicon substrate of a first conductive type;
an emitter layer of a second conductive type opposite the first conductive type, the emitter layer forming a hetero junction with the single crystalline silicon substrate and including a first crystalline portion;
a back surface field layer of the first conductive type, the back surface field layer forming a hetero junction with the single crystalline silicon substrate and including a second crystalline portion;
a first electrode portion on the emitter layer; and
a second electrode portion on the back surface field layer,
wherein the back surface field layer has a crystallinity greater than a crystallinity of the emitter layer,
wherein the emitter layer and the back surface field layer are on a back surface of the single crystalline silicon substrate and are spaced apart from each other, and
wherein a first passivation layer is located on the back surface of the single crystalline silicon substrate between the emitter layer and the back surface field layer and is not located between the emitter layer and the back surface of the single crystalline silicon substrate and between the back surface field layer and the back surface of the single crystalline silicon substrate.

2. The solar cell of claim 1 , further comprising a second passivation layer including a third crystalline portion on the single crystalline silicon substrate.

3. The solar cell of claim 2 , wherein the second passivation layer has a crystallinity equal to or less than 10%.

4. The solar cell of claim 1 , wherein the crystallinity of the back surface field layer is equal to or less than 30%.

5. The solar cell of claim 1 , wherein the crystallinity of the emitter layer is equal to or less than 10%.

6. The solar cell of claim 2 , wherein the first passivation layer includes a fourth crystalline portion.

7. The solar cell of claim 6 , wherein the first passivation layer has a crystallinity equal to or less than 10%.

8. The solar cell of claim 1 , wherein at least one of the first and second electrode portions comprises a transparent conductive layer and a metal electrode.

Assignees

• Lg Electronics Inc

Inventors

• Yang Hyunjin
• Lee Heonmin
• Choi Junghoon
• Ji Kwangsun

Classifications

• H01L31/022466

  Electricity · mapped topic

• Y02E10/546

  Polycrystalline silicon PV cells · CPC title

• H01L31/0682

  Electricity · mapped topic

• H01L31/0747

  Electricity · mapped topic

• H01L31/077

  Electricity · mapped topic