Cigs film, and cigs solar cell employing the same
US-2015380589-A1 · Dec 31, 2015 · US
Photoelectric conversion device
US9484476B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9484476-B2 |
| Application number | US-201214007897-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2012 |
| Priority date | Apr 25, 2011 |
| Publication date | Nov 1, 2016 |
| Grant date | Nov 1, 2016 |
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- Title
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Abstract
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It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.
First claim
Opening claim text (preview).
The invention claimed is: 1. A photoelectric conversion device wherein a polycrystalline semiconductor layer, including a plurality of semiconductor particles coupled together and a group III-B element included at a grain boundary of each of the semiconductor particles, is used as a light-absorbing layer, wherein each of the semiconductor particles includes a group I-III-VI compound, and wherein, in each of the plurality of semiconductor particles, a surface portion of the semiconductor particle has a higher composition ratio PI of a group I-B element to a group III-B element than a central portion of the semiconductor particle. 2. The photoelectric conversion device according to claim 1 , wherein, in each of the plurality of semiconductor particles, a surface portion of the semiconductor particle has a higher composition ratio PVI of a group VI-B element to a group III-B element than the central portion of the semiconductor particle. 3. The photoelectric conversion device according to claim 2 , wherein the composition ratio PI and the composition ratio PVI in each of the semiconductor particles increase gradually toward a surface of each of the semiconductor particles. 4. The photoelectric conversion device according to claim 1 , wherein the group I-III-VI compound includes Cu as the group I-B element, and includes Se as the group VI-B element. 5. The photoelectric conversion device according to claim 4 , wherein the group I-III-VI compound includes a combination of In and Ga as the group III-B element. 6. The photoelectric conversion device according to claim 1 , wherein the light-absorbing layer includes a plurality of voids.
Assignees
Inventors
Classifications
Solar cells from Group II-VI materials · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L31/0322Primary
Electricity · mapped topic
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- What does patent US9484476B2 cover?
- It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI …
- Who is the assignee on this patent?
- Kubo Shintaro, Kikuchi Michimasa, Asao Hideaki, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H01L31/0322. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).