Waveguide-coupled MSM-type photodiode

Patent metadata

Field	Value
Publication number	US-9406832-B2
Application number	US-201314388028-A
Country	US
Kind code	B2
Filing date	Mar 18, 2013
Priority date	Mar 30, 2012
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

A waveguide-coupled MSM-type photodiode of the present invention comprises a structure in which a semiconductor light-absorbing layer and an optical waveguide core layer are adjacent and optically coupled to each other, has formed metal-semiconductor-metal (MSM) junctions which are arranged at an interval on the semiconductor light-absorbing layer, and is characterized in that of the MSM electrodes arranged at the interval, a voltage is set so that a reverse bias is applied to those MSM electrodes that are arranged on a light incidence side.

First claim

The invention claimed is:

1. A waveguide-coupled metallic-semiconductor-metallic (MSM)-type photodiode comprising:
a semiconductor light absorbing layer arranged to be adjacent to an optical waveguide core layer, the optical waveguide core layer being optically coupled with the semiconductor light absorbing layer; and
MSM junctions configured to be formed on the semiconductor light absorbing layer, the MSM junctions being arranged at intervals;
wherein a voltage is set such that a reverse bias is applied to an MSM electrode of a MSM junction arranged at a light incidence side among MSM electrodes of the MSM junctions arranged at intervals, and
wherein a distance between the MSM electrode arranged at the light incidence side among the MSM electrodes arranged at the intervals on the semiconductor light absorbing layer and an edge portion of the semiconductor absorbing layer is λ/n eff or less than when λ is an incident light wavelength, and n eff is an effective refractive index of an optical signal field in the semiconductor light absorbing layer.

2. The waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein a width of the MSM electrode arranged at the light incidence side among the MSM electrodes arranged at the intervals on the semiconductor light absorbing layer is greater than that of the other MSM electrodes.

3. The waveguide-coupled MSM-type photodiode according to claim 2 ,
wherein an interval between the MSM electrode arranged at the light incidence side among the MSM electrodes arranged at the intervals on the semiconductor light absorbing layer and an adjacent MSM electrode is smaller than an interval between the other adjacent MSM electrodes.

4. The waveguide-coupled MSM-type photodiode according to claim 2 ,
wherein the semiconductor light absorbing layer and the optical waveguide core layer are stacked and optically coupled on a substrate in a vertical direction.

5. The waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein an interval between the MSM electrode arranged at the light incidence side among the MSM electrodes arranged at the intervals on the semiconductor light absorbing layer and an adjacent MSM electrode is smaller than an interval between the other adjacent MSM electrodes.

6. The waveguide-coupled MSM-type photodiode according to claim 5 ,
wherein the semiconductor light absorbing layer and the optical waveguide core layer are stacked and optically coupled on a substrate in a vertical direction.

7. The waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein the semiconductor light absorbing layer and the optical waveguide core layer are stacked and optically coupled on a substrate in a vertical direction.

8. The waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein the semiconductor light absorbing layer and the optical waveguide core layer are adjacent and optically coupled on a substrate in a horizontal direction.

9. An optical receiving circuit, comprising:
a waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein the waveguide-coupled MSM-type photodiode is optically coupled with differential optical signals transmitted through two optical waveguides.

10. The optical receiving circuit according to claim 9 ,
wherein the waveguide-coupled MSM-type photodiode optically coupled with the differential optical signals is a balanced differential photodiode.

11. The optical receiving circuit according to claim 9 ,
wherein the waveguide-coupled MSM-type photodiode optically coupled with the differential optical signals is a dual differential photodiode.

12. The waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein the optical waveguide core layer includes at least one layer made of a material selected from a group comprised of single crystalline silicon, amorphous silicon, strained silicon, polycrystalline silicon, Si 1−x Ge x (x=0.01˜0.9), silicon nitride, and silicon oxynitride.

13. The waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein the semiconductor light absorbing layer includes at least one layer made of a material selected from a group comprised of Ge, Si 1−x Ge x (x=0.01˜0.9), Si, InGaAs, GaN, GaAs, GaInP, and InP.

14. The waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein in the photodiode, when the semiconductor light absorbing layer includes Ge and Si 1−x Ge x (x=0.01˜0.9), a Si 1−y Ge y (y=0˜0.9) layer is stacked on Ge and Si 1−x Ge x (x=0.01˜0.9) in order to form a Schottky junction.

15. The waveguide-coupled MSM-type photodiode according to claim 1 ,
wherein the MSM electrodes arranged at the intervals on the semiconductor light absorbing layer include at least one layer made of a material or an alloy layer made of at least two materials selected from aluminum, silver, gold, copper, tungsten, titanium, titanium nitride, and nickel.

16. An optical interconnection system on an LSI, comprising:
a light receiving unit including the photodiode according to claim 1 .

17. An optical interconnection module, comprising:
a Si substrate including the photodiode according to claim 1 formed thereon; and
an LSI electronic circuit monolithically formed with the photodiode on the Si substrate.

18. A waveguide-coupled metallic-semiconductor-metallic (MSM)-type photodiode comprising:
a semiconductor light absorbing layer arranged to be adjacent to an optical waveguide core layer, the optical waveguide core layer being optically coupled with the semiconductor light absorbing layer; and
MSM junctions configured to be formed on the semiconductor light absorbing layer, the MSM junctions being arranged at intervals;
wherein a voltage is set such that a reverse bias is applied to an MSM electrode of a MSM junction arranged at a light incidence side among MSM electrodes of the MSM junctions arranged at intervals,
wherein a width of the MSM electrode arranged at the light incidence side among the MSM electrodes arranged at the intervals on the semiconductor light absorbing layer is greater than that of the other MSM electrodes, and
wherein a distance between the MSM electrode arranged at the light incidence side among the MSM electrodes arranged at the intervals on the semiconductor light absorbing layer and an edge portion of the semiconductor absorbing layer is λ/n eff or less than when λ is an incident light wavelength, and n eff is an effective refractive index of an optical signal field in the semiconductor light absorbing layer.

19. A waveguide-coupled metallic-semiconductor-metallic (MSM)-type photodiode comprising:
a semiconductor light absorbing layer arranged to be adjacent to an optical waveguide core layer, the optical waveguide core layer being optically coupled with the semiconductor light absorbing layer; and
MSM junctions configured to be formed on the semiconductor light absorbing layer, the MSM junctions being arranged at intervals;
wherein a voltage is set such that a reverse bias is applied to an MSM electrode of a MSM junction arranged at a light incidence side among MSM electrodes of the MSM junctions arranged at intervals,
wherein a distance between the MSM electrode arranged at the light incidence side among the MSM electrodes arranged at the intervals on the semiconductor light absorbing layer and an edge portion of the semiconductor absorbing layer is λ/neff or less than when λ is an incident light wavelength, and neff is an effective refractive index of an optical signal field in the semiconductor light absorbing layer, a

Assignees

• Nec Corp

Inventors

• Fujikata Junichi
• Nakamura Takahiro

Classifications

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/166

  Amorphous semiconductors · CPC title

• H10F77/164

  Polycrystalline semiconductors · CPC title

• H10F39/806

  Optical elements or arrangements associated with the image sensors · CPC title

• G02B6/12004

  Combinations of two or more optical elements · CPC title