Passivated iron disulfide surface encapsulated in zinc sulfide

Patent metadata

Field	Value
Publication number	US-9806209-B2
Application number	US-201715615940-A
Country	US
Kind code	B2
Filing date	Jun 7, 2017
Priority date	Mar 18, 2014
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

A passivated iron disulfide (FeS 2 ) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS 2 encapsulated by ZnS.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A passivated iron disulfide film, comprising:
a crystalline iron disulfide layer having a surface comprising crystal surfaces;
a substrate; and
an epitaxial zinc sulfide capping layer encapsulating the crystal surfaces of the crystalline iron disulfide layer,
wherein the epitaxial zinc sulfide capping layer passivates sulfur atoms present on the crystal surfaces on the surface of the crystalline iron disulfide layer, thereby reducing surface defects as compared to a crystalline iron disulfide layer not capped with an epitaxial zinc sulfide layer.

2. The iron disulfide film of claim 1 , wherein the substrate is a rigid material.

3. The iron disulfide film of claim 1 , wherein the substrate is a flexible material.

4. The iron disulfide film of claim 1 , wherein the crystalline iron disulfide comprises crystallites ranging in size from 1 nm to 10 μm.

5. A photovoltaic device comprising the iron disulfide film of claim 1 .

6. The photovoltaic device of claim 5 , wherein the substrate is a rigid material.

7. The photovoltaic device of claim 5 , wherein the substrate is a flexible material.

8. The photovoltaic device of claim 5 , wherein the crystalline iron disulfide comprises crystallites ranging in size from 1 nm to 10 μm.

9. The iron disulfide film of claim 1 , wherein the surface defects in the crystalline iron disulfide layer are assessed by comparing an X-ray photoelectron spectroscopy scan of S 2p doublets associated with surface defects with an X-ray photoelectric spectroscopy scan of S 2p doublets associated with the bulk state.

10. The iron disulfide film of claim 1 , wherein the crystal surfaces on the surface of the layer of crystalline iron disulfide and the capping layer of epitaxial zinc sulfide form a lattice match.

11. The iron disulfide film of claim 1 , wherein the capping layer of epitaxial zinc sulfide has a lattice constant of about 5.411 Å.

12. The iron disulfide film of claim 1 , wherein the crystal surfaces on the surface of layer of crystalline iron disulfide have a lattice constant of about 5.417 Å.

13. The iron disulfide film of claim 1 , wherein the capping layer of epitaxial zinc sulfide is deposited by physical vapor depostion.

14. The iron disulfide film of claim 1 , wherein the capping layer of epitaxial zinc sulfide is deposited by chemical vapor deposition.

15. The iron disulfide film of claim 14 , wherein the chemical vapor deposition is atomic layer deposition.

16. The iron disulfide film of claim 1 , wherein the layer of crystalline iron disulfide is deposited by physical vapor depostion.

17. The iron disulfide film of claim 1 , wherein the layer of crystalline iron disulfide is deposited by chemical vapor deposition.

18. The iron disulfide film of claim 17 , wherein the chemical vapor deposition is atomic layer deposition.

19. Passivated iron disulfide crystallites, comprising:
iron disulfide crystallites comprising crystal surfaces;
an epitaxial zinc sulfide matrix encapsulating the iron disulfide crystallites; and
wherein the epitaxial zinc sulfide matrix passivates sulfur atoms present on the crystal surfaces of the iron disulfide crystallites, thereby reducing surface defects as compared to iron disulfide crystallites not encapsulated by an epitaxial zinc sulfide matrix.

20. A photovoltaic device comprising the passivated iron disulfide crystallites of claim 19 .

Assignees

• Us Navy

Inventors

• Frantz Jesse A
• Myers Jason D
• Baker Colin C
• Sanghera Jasbinder S
• Erwin Steven C

Classifications

• C23C14/0623

  Sulfides, selenides or tellurides · CPC title

• H01L31/02167 Primary

  Electricity · mapped topic

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/0368

  Electricity · mapped topic

• H01L31/032

  Electricity · mapped topic