Electrostatic chuck with internal flow adjustments for improved temperature distribution

Patent metadata

Field	Value
Publication number	US-9520315-B2
Application number	US-201314145702-A
Country	US
Kind code	B2
Filing date	Dec 31, 2013
Priority date	Dec 31, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

First claim

What is claimed is:

1. A substrate chuck comprising:
a dielectric puck to electrostatically grip a substrate;
a cooling plate of the chuck fastened to and thermally coupled to the dielectric puck;
a supply plenum within the chuck to receive coolant from an external source;
a plurality of coolant chambers within the chuck thermally coupled to the cooling plate, the coolant chambers to receive coolant from the supply plenum;
a return plenum within the chuck coupled to the cooling chambers to exhaust coolant from the cooling chambers; and
a plurality of adjustable orifices within the chuck between the supply plenum and a respective one of the cooling chambers to control a flow rate of coolant from the supply plenum to the cooling chambers.

2. The apparatus of claim 1 , further comprising a plurality of return ports to return coolant from the cooling chambers for resupply to the supply plenum.

3. The apparatus of claim 1 , wherein the adjustable orifices each comprise:
an orifice between the supply plenum and a respective cooling chambers; and
an interchangeable insert to control coolant flow through the orifice.

4. The apparatus of claim 1 , wherein the cooling plate comprises a middle plate and wherein the adjustable orifices are formed in the middle plate.

5. The apparatus of claim 4 , wherein the cooling plate further comprises a top plate and a bottom plate, wherein the middle plate is sandwiched between the top plate and the bottom plate, wherein the cooling plate is disassembled to access the middle plate.

6. The apparatus of claim 5 , wherein at least some of the adjustable orifices of the middle plate are machined when the cooling plate is disassembled to adjust a flow rate so that the flow rate of some of the adjustable orifices is different from others of the adjustable orifices.

7. The apparatus of claim 5 , further comprising a plurality of inserts to restrict flow through a respective orifice, the inserts being exchangeable to provide different flow rates.

8. An apparatus comprising:
a dielectric puck to electrostatically grip a silicon wafer;
a top plate of a cooling plate, the top plate being fastened to the dielectric puck;
a middle plate of a cooling plate the middle plate having a plurality of adjustable orifices and defining a plurality of coolant chambers between the middle plate and the top plate, the coolant chambers each being in communication with at least one orifice to allow coolant to flow through the middle plate to a respective coolant chamber;
a bottom plate of a cooling plate, the bottom plate defining a supply plenum between the bottom plate and the middle plate to supply coolant to the orifices; and
wherein a flow rate through each orifice is independently adjustable to control coolant flow through each respective one of the orifices.

9. The apparatus of claim 8 , wherein the orifices comprise openings in the middle plate, wherein the middle plate may be dissembled from the top plate and the bottom plate to machine the orifices to adjust the flow rate through each respective orifice, and wherein the middle plate may be assembled to the top plate and the bottom plate for use after the machining.

10. The apparatus of claim 8 , wherein the middle plate defines return plenums to conduct coolant from the coolant chambers to a return port.

11. The apparatus of claim 10 , wherein the middle plate has hexagonal areas to define the coolant chambers and coolant channels of the return plenums surrounding each hexagonal area.

12. The apparatus of claim 11 , the middle plate further comprising a circular channel surrounding the hexagonal areas and wherein the coolant channels conduct the coolant into the circular channel of the middle plate.

13. The apparatus of claim 11 , wherein each hexagonal area is supplied by a different one of the plurality of adjustable orifices.

14. A method for adjusting coolant flow in an electrostatic chuck, the method comprising:
heating a dielectric puck, the dielectric puck being for electrostatically gripping a silicon wafer;
detecting heat at a plurality of locations on a top surface of the dielectric puck, the locations each being thermally coupled to at least one of a plurality of coolant chambers of the electrostatic chuck; and
adjusting a plurality of orifices within the electrostatic chuck that are each coupled to a respective one of the coolant chambers to control coolant flow into the coolant chambers based on the detected heat.

15. The method of claim 14 , wherein detecting heat comprises imaging the dielectric puck during flowing coolant into the coolant chambers through the orifices and during applying heat to the dielectric puck.

16. The method of claim 15 , wherein applying heat comprises activating heaters within the electrostatic chuck.

17. The method of claim 14 wherein adjusting a plurality of orifices comprises independently changing the flow rate through each of the plurality of orifices to control the flow of coolant from a supply plenum to a respective coolant chamber.

18. The method of claim 14 , wherein detecting heat comprises determining a temperature level at different areas of the dielectric puck, the different areas corresponding to different coolant chambers.

19. The method of claim 18 , wherein adjusting the orifices comprises increasing coolant flow to coolant chambers corresponding to hotter areas and decreasing coolant flow to coolant chambers corresponding to cooler areas.

20. The method of claim 14 , wherein adjusting orifices comprises disassembling the electrostatic chuck, machining at least a subset of the plurality of the orifices to change the respective flow rate, and reassembling the electrostatic chuck.

Assignees

• Parkhe Vijay D
• Busche Matthew J
• Boyd Jr Wendell
• Thach Senh
• Makhratchev Konstantin
• Ono Masanori
• Applied Materials Inc

Inventors

• Parkhe Vijay D
• Busche Matthew J
• Boyd Jr Wendell
• Thach Senh
• Makhratchev Konstantin
• Ono Masanori

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P72/72 Primary

  using electrostatic chucks · CPC title

• Y10T137/0318

  Processes · CPC title

• H01L21/67109

  Electricity · mapped topic

• H01L21/6831 Primary

  Electricity · mapped topic