Methods for forming a molecular dopant monolayer on a substrate

Patent metadata

Field	Value
Publication number	US-9490125-B2
Application number	US-201414758784-A
Country	US
Kind code	B2
Filing date	Jan 6, 2014
Priority date	Jan 30, 2013
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

Methods for forming a conformal dopant monolayer on a substrate are provided. In one embodiment, a method for forming a semi-conductor device on a substrate includes forming a charged layer on a silicon containing surface disposed on a substrate, wherein the charged layer has a first charge, and forming a dopant monolayer on the charged layer, wherein dopants formed in the dopant monolayer include at least one of a group III or group V atoms.

First claim

The invention claimed is:

1. A method for forming a semiconductor device on a substrate, comprising:
forming a charged layer on a silicon containing surface disposed on a substrate by immersing the substrate into a first treatment solution including aminosilane, wherein the charged layer has a first charge; and
forming a dopant monolayer on the charged layer, wherein dopants formed in the dopant monolayer include at least one of a group III or group V atoms.

2. The method of claim 1 , further comprising:
forming a capping layer on the dopant monolayer.

3. The method of claim 2 , further comprising:
diffusing dopants from the dopant monolayer into the substrate to form a doped region on the substrate.

4. The method of claim 3 , wherein diffusing the dopants comprises:
heating the substrate to a temperature between about 900 degrees Celsius and about 1300 degrees Celsius.

5. The method of claim 3 , wherein the doped region has a dopant concentration between about 1×10 19 atoms/cm 3 and about 2×10 20 atoms/cm 3 .

6. The method of claim 2 , wherein the capping layer is a dielectric layer.

7. The method of claim 1 , further comprising:
rinsing the substrate with a cleaning solution after forming the dopant monolayer, wherein the cleaning solution includes methanol.

8. The method of claim 1 , wherein the silicon containing surface includes a semiconductor fin utilized to form a FinFET device.

9. The method of claim 1 , forming a dopant monolayer on the charged layer further comprises:
immersing the substrate in a second treatment solution, wherein the second treatment solution includes the group III or group V atoms to form the dopant monolayer on the substrate surface.

10. The method of claim 1 , wherein the substrate is pre-cleaned and forms a hydroxylation surface to absorb molecules from the first treatment process prior to forming the charged layer on the silicon containing surface on the substrate.

11. A method for forming a semiconductor device on a substrate comprising:
immersing a substrate having a semiconductor fin formed thereon in a first treatment solution containing aminosilane;
immersing the substrate in a second treatment solution containing group III or group V anions to form a dopant monolayer on the substrate;
forming a capping layer on the dopant monolayer; and
performing a thermal annealing process on the substrate.

12. The method of claim 11 , wherein immersing the substrate in the first treatment solution further comprises:
forming a positive charge layer on the semiconductor fin on the substrate wherein the positive charge layer provides cations to be absorbed with the group III or group V anions in the second treatment solution.

13. The method of claim 11 , wherein performing the thermal annealing process further comprises:
diffusing dopants in the dopant monolayer into the semiconductor fin to form a doped region in the semiconductor fin.

14. A method for forming a dopant monolayer on a substrate comprising:
forming a positive charge layer having cations on a semiconductor fin disposed on a substrate;
disposing a treatment solution on the positive charge layer to form a dopant monolayer on the positive charge layer, wherein the treatment solution comprises anions; and
forming a capping layer on the dopant monolayer that comprises the cations and the anions.

15. The method of claim 14 , further comprising:
thermal annealing the substrate to diffuse dopants from the dopant monolayer into the substrate.

16. The method of claim 15 , further comprising:
forming a doped region that includes the dopants from the dopant monolayer.

17. The method of claim 14 , wherein the substrate is pre-cleaned prior to forming the positive charge layer on the substrate.

18. The method of claim 14 , wherein the substrate is rinsed with a solution containing methanol or alcohol after the dopant monolayer is formed on the substrate.

Assignees

• Applied Materials Inc

Inventors

• Gouk Roman
• Verhaverbeke Steven

Classifications

• H10P70/80

  Cleaning only by supercritical fluids · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/10

  Cleaning before device manufacture, i.e. Begin-Of-Line process · CPC title

• H10P32/1408 Primary

  from or through or into an external applied layer, e.g. photoresist or nitride layers · CPC title

• H10P32/171 Primary

  being group IV material · CPC title