System for measuring the image quality of an optical imaging system

Patent metadata

Field	Value
Publication number	US-9429495-B2
Application number	US-201414456100-A
Country	US
Kind code	B2
Filing date	Aug 11, 2014
Priority date	Jun 4, 2004
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

Methods for measuring the image quality of a projection objective include providing a measuring structure on an image-side of the projection objective, providing an immersion fluid between the projection objective and the measuring structure, directing light through the projection objective and the immersion fluid to the measuring structure while shielding the measuring structure from the immersion fluid, detecting light transmitted by the measuring structure, and determining an image quality of the projection objective based on the detected light.

First claim

What is claimed is:

1. A microlithography projection exposure system, comprising:
an illumination system for providing radiation having a wavelength of 193 nm;
a projection objective comprising a plurality of optical elements for imaging a pattern arranged in an object plane of the projection objective to an image plane of the projection objective using the radiation, the projection objective being configured for imaging when an immersion liquid is positioned between the image plane and an optical element of the plurality of optical elements located closest to the image plane;
a measuring system for measuring at least one imaging parameter of the projection objective, the measuring system comprising:
a substrate formed from a material transparent to the radiation;
a layer of material opaque to the radiation;
at least one aperture formed in the layer of opaque material;
a detector positioned, during operation, to detect radiation transmitted by the at least one aperture; and
an evaluation device in communication with the detector and programmed so that during operation the evaluation device determines a value for the at least one imaging parameter based on the detected radiation,

wherein the microlithography projection exposure system is configured to position the measuring system relative to the projection objective so that the at least one aperture is located at the image plane and to provide the immersion liquid between the image plane and the optical element closest to the image plane during operation,
wherein the measuring system further comprises a protective system positioned, during operation, between the layer of material and the optical element closest to the image plane.

2. The microlithography projection exposure system of claim 1 , wherein the measuring system is an interferometric measuring system.

3. The microlithography projection exposure system of claim 2 , wherein the at least one aperture generates a reference wave from the radiation which overlaps with another wave to produce a superposition at the detector.

4. The microlithography projection exposure system of claim 1 , wherein the projection objective has an image-side numerical aperture of 0.8 or more when an immersion fluid is positioned between the image plane and the optical element closest to the image plane.

5. The microlithography projection exposure system of claim 1 , wherein the projection objective has an image-side numerical aperture of 1 or more when an immersion fluid is positioned between the image plane and the optical element closest to the image plane.

6. The microlithography projection exposure system of claim 1 , wherein the microlithography projection exposure system is configured to use water as the immersion liquid during operation.

7. The microlithography projection exposure system of claim 1 , wherein the substrate is formed from quartz.

8. The microlithography projection exposure system of claim 1 , wherein the layer of opaque material is formed from a metal.

9. The microlithography projection exposure system of claim 8 , wherein the metal is chromium.

10. The microlithography projection exposure system of claim 1 , wherein the protective system increases resistance of the opaque material to degradation caused by the immersion liquid.

11. The microlithography projection exposure system of claim 10 , wherein the protective system comprises a layer of material transparent to the radiation.

12. The microlithography projection exposure system of claim 1 , wherein the measuring system further comprises an object-side structure carrier which, during operation, is positioned at the object plane of the projection objective.

13. The microlithography projection exposure system of claim 1 , wherein the detector is a CCD array.

14. The microlithography projection exposure system of claim 1 , wherein the measuring system further comprises a microscope objective positioned between the at least one aperture and the detector.

15. The microlithography projection exposure system of claim 14 , wherein the microscope objective is configured to image a region of a pupil of the projection objective during operation.

16. The microlithography projection exposure system of claim 1 , wherein the at least one imaging parameter represents an imaging behavior of the projection objective or image defects of the projection objective or wave aberrations of the projection objective.

17. The microlithography projection exposure system of claim 1 , further comprising a fluid chamber between the optical element closest to the image plane and the image plane which, during operation, contains immersion liquid.

18. The microlithography projection exposure system of claim 1 , wherein the interspace between the image plane and the optical element closest to the image plane is sufficiently small such that capillary forces maintain the immersion liquid in the interspace during operation of the microlithography projection exposure system.

19. The microlithography projection exposure system of claim 1 , wherein the at least one aperture comprises at least one pinhole and a second aperture in addition to the at least one pinhole.

20. The microlithography projection exposure system of claim 19 , wherein the pinhole has a diameter comparable to the radiation wavelength.

21. The microlithography projection exposure system of claim 20 , wherein the second aperture is substantially larger than the at least one pinhole.

22. The microlithography projection exposure system of claim 1 , wherein the at least one aperture has a diameter substantially larger than the radiation wavelength.

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Mengel Markus
• Wegmann Ulrich
• Ehrmann Albrecht
• Emer Wolfgang
• Clement Reiner
• Mathijssen Ludo

Classifications

• G03F7/70591

  Testing optical components · CPC title

• Y10T428/31

  Surface property or characteristic of web, sheet or block · CPC title

• G03F7/70341 Primary

  Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply (chemical composition of immersion liquids G03F7/2041) · CPC title

• G03F7/70958

  Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties · CPC title

• G03F7/70716

  Stages · CPC title