System and methods for spin-on coating of self-assembled monolayers or periodic organosilicates on a substrate

Patent metadata

Field	Value
Publication number	US-9418834-B2
Application number	US-201414570865-A
Country	US
Kind code	B2
Filing date	Dec 15, 2014
Priority date	Dec 17, 2013
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

This disclosure relates to a processing system for spin-coating a substrate with Molecular Self-assembly (MSA) chemicals to form photoresist films and/or low dielectric constant (low-k) films on the substrate. The spin-coating processing system may include a spin-coating chamber that can receive and spin-coat MSA chemicals onto the substrate and an annealing chamber to thermally treat the substrate after the spin-coat process. In certain embodiments, the spin-coating processing system may also pre-treat or pre-wet the substrate prior to the spin-coating process.

First claim

What is claimed is:

1. A method for treating a substrate, comprising:
receiving the substrate in a chemical dispensing system, the substrate comprising an hydroxide layer on a surface of the substrate;
dispensing a first solvent solution to pre-wet the surface, the first solvent solution comprising an amount of water no more than 10% by weight;
rotating the substrate, after dispensing the first solvent solution, around a center region of the substrate;
dispensing a patterning chemical onto the pre-wet surface while rotating the substrate, the patterning chemical comprising:
a carbon compound;
a bonding compound coupled to the carbon compound;
a terminal compound coupled to the carbon compound that is opposite the bonding compound;
a second solvent solution;

annealing the substrate following the dispensing of the pattern chemical on the substrate.

2. The method of claim 1 , wherein the bonding compound comprises a Si x O y molecule, the carbon compound comprises a C x H y molecule, and the terminal compound comprises an amino group (NHx).

3. The method of claim 1 , further comprising:
prebaking the substrate prior to dispensing the first solvent; or
chilling the substrate prior to dispensing the first solvent.

4. The method of claim 1 , wherein the dispensing of the patterning chemical comprises an amount to bond with more than a majority of the hydroxide layer.

5. The method of claim 1 , wherein the patterning chemical comprises less than 0.5 mM of the carbon compound, bonding compound, and the terminal compound.

6. The method of claim 1 , wherein the first solvent comprises propylene glycol monomethyl ether acetate (PGMEA), and the second solvent solution comprises PGMEA.

7. The method of claim 1 , wherein the first solvent comprises propylene glycol monomethyl ether acetate (PGMEA), and the second solvent solution comprises water no more than 2% by weight.

8. The method of claim 1 , wherein the annealing comprises a temperature no more than 250C.

9. The method of claim 8 , wherein the annealing comprises a time of no more than 5 minutes.

10. The method of claim 8 , wherein the annealing comprises a time of about 5 minutes.

11. The method of claim 1 , wherein the rotating comprises a rotation speed of no more than 2200 rpm.

12. The method of claim 1 , wherein the rotating comprises a rotation speed of no less than 800 rpm.

13. The method of claim 1 , wherein the rotating comprises a rotation speed of about 2000 rpm.

14. The method of claim 1 , wherein the rotating comprises a rotation speed of about 1000 rpm.

15. The method of claim 1 , wherein the amount of water comprises no more than 2% by weight.

16. The method of claim 1 , wherein the patterning chemical comprises Diethyleneamine.

17. A method for treating a substrate, comprising:
receiving the substrate in a spin-coating system, the substrate comprising a barrier layer comprising Tantalum;
dispensing a first solvent solution to pre-wet the surface of the substrate, the first solvent solution comprising an amount of water no more than 10% by weight;
rotating the substrate around a center region of the substrate;
dispensing an organosilicate, using the spin-coating system, onto the pre-wet surface;
forming a dielectric layer on the substrate using the organosilicate; and
applying a metal layer to the dielectric layer.

18. The method of claim 17 , wherein the rotating comprises a rotation speed of no less than 800 rpm.

19. The method of claim 17 , wherein the annealing comprises a temperature no more than 250C.

20. A method for treating a substrate, comprising:
receiving the substrate in a spin-coating system, the substrate comprising an hydroxide layer on a surface of the substrate;
dispensing a first solvent solution to pre-wet the surface in the spin-coating system, the first solvent solution comprising an amount of water no more than 10% by weight;
rotating the substrate, after dispensing the first solvent solution, around a center region of the substrate; and
dispensing a organosilicate onto the pre-wet surface while rotating the substrate in the spin-coating system.

Assignees

• Tokyo Electron Ltd

Inventors

• Negreira Ainhoa Romo
• Nafus Kathleen
• Kuwahara Yuhei
• Matsunaga Koichi

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/6546

  to change the surface groups of the insulating materials · CPC title

• H10P14/6534 Primary

  by exposure to a liquid · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H01L21/02126 Primary

  Electricity · mapped topic