Chemically altered carbosilanes for pore sealing applications

Patent metadata

Field	Value
Publication number	US-9269652-B2
Application number	US-201113995905-A
Country	US
Kind code	B2
Filing date	Dec 22, 2011
Priority date	Dec 22, 2011
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

A method including forming a dielectric material including a surface porosity on a circuit substrate including a plurality of devices; chemically modifying a portion of the surface of the dielectric material with a first reactant; reacting the chemically modified portion of the surface with a molecule that, once reacted, will be thermally stable; and forming a film including the molecule. An apparatus including a circuit substrate including a plurality of devices; a plurality of interconnect lines disposed in a plurality of layers coupled to the plurality of devices; and a plurality of dielectric layers disposed between the plurality of interconnect lines, wherein at least one of the dielectric layers comprises a porous material surface relative to the plurality of devices and the surface comprises a pore obstructing material.

First claim

What is claimed is:

1. A method comprising:
forming a dielectric material comprising a surface porosity on a circuit substrate comprising a plurality of devices, a surface of the dielectric material comprising a surface in which a plurality of pores emanate therefrom;
selectively chemically modifying a portion of the surface of the dielectric material with a hydrogen or oxygen plasma relative to the plurality of pores;
reacting the chemically modified portion of the surface with a molecule that, once reacted, will be thermally stable; and
forming a film comprising the molecule, wherein with the film, the surface porosity of the dielectric material is reduced,
wherein forming the film comprises forming a film on the surface of the dielectric material and not in the pores.

2. The method of claim 1 , wherein chemically modifying a portion of the surface of the dielectric material comprises rendering the portion more hydrophilic.

3. The method of claim 1 , wherein chemically modifying a portion of the surface of the dielectric comprises forming silanol groups on the portion.

4. The method of claim 1 , wherein forming the film comprises forming a polymer comprising the thermally stable molecule.

5. The method of claim 1 , wherein the molecule comprises a carbosilane.

6. The method of claim 5 , wherein the carbosilane is one of a chlorosilane, an aminosilane, or a hydridosilane.

7. The method of claim 1 , wherein the circuit substrate comprises interconnect structures to ones of the plurality of devices and forming the dielectric material comprises forming the dielectric material on the interconnect structures.

8. A method comprising:
forming a dielectric material comprising a surface in which pores emanate therefrom on a circuit substrate comprising a plurality of devices;
selectively chemically modifying a portion of the surface of the dielectric material with a hydrogen or oxygen plasma relative to the plurality of pores;
reacting a thermally stable carbosilane with the chemically modified surface portion; and
forming a pore obstructing film on the chemically modified portion of the surface,
wherein forming the film comprises forming a film on the surface of the dielectric material and not in the pores.

9. The method of claim 8 , wherein the carbosilane is a chlorosilane.

10. The method of claim 8 , wherein the carbosilane is an aminosilane.

11. The method of claim 9 , wherein the carbosilane is a hydridosilane.

12. The method of claim 8 , wherein chemically modifying a portion of the surface of the dielectric comprises forming silanol groups on the portion.

13. The method of claim 8 , wherein the circuit substrate comprises interconnect structures to ones of the plurality of devices and forming the dielectric material comprises forming the dielectric material on the interconnect structures.

14. An apparatus comprising:
a circuit substrate comprising a plurality of devices;
a plurality of interconnect lines disposed in a plurality of layers coupled to ones of the plurality of devices; and
a plurality of dielectric layers disposed between the plurality of interconnect lines,
wherein at least one of the dielectric layers comprises a porous material defining a base and a surface relative to the plurality of devices and the surface is more hydrophilic than the base and selectively comprises a pore obstructing material of a carbosilane thereon chemically reacted with a material of the at least one of the dielectric layers relative to pores emanating from the surface with the pore obstructing material not present in the emanating pores themselves.

15. The apparatus of claim 14 , wherein the pore obstructing material is present in an amount to obstruct otherwise exposed pores in the surface.

16. The apparatus of claim 14 , wherein the pore obstructing material is reacted with a surface of the porous material.

17. The apparatus of claim 14 , wherein the pore obstructing material comprises a molecular structure including at lease one ring structure of carbon and silicon atoms.

18. The apparatus of claim 14 , wherein the pore obstructing material is thermally stable at a temperature of 400 Celsius.

Assignees

• Michalak David J
• Blackwell James M
• Bielefeld Jeffery D
• Clarke James S
• Intel Corp

Inventors

• Michalak David J
• Blackwell James M
• Bielefeld Jeffery D
• Clarke James S

Classifications

• H10P14/6546

  to change the surface groups of the insulating materials · CPC title

• H10P14/6534

  by exposure to a liquid · CPC title

• H10P14/665

  Porous materials · CPC title

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title