Pore-fill compositions
US-2016185984-A1 · Jun 30, 2016 · US
US9508549B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9508549-B2 |
| Application number | US-201514972522-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2015 |
| Priority date | Dec 26, 2014 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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Methods of forming an electronic device comprise: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar 1 , Ar 2 , Ar 3 and Ar 4 independently represent an optionally substituted divalent aromatic group; X 1 and X 2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR 1 —, —NR 2 C(O)—, —S—, —S(O)—, —SO 2 — or an optionally substituted C 1-20 divalent hydrocarbon group, wherein R 1 and R 2 independently represent H or a C 1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and (c) heating the composition; wherein the polymer is disposed in pores of the porous feature. The methods find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.
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What is claimed is: 1. A method of forming an electronic device, comprising: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar 1…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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