Semiconductor device

Patent metadata

Field	Value
Publication number	US-9412874-B2
Application number	US-201514706282-A
Country	US
Kind code	B2
Filing date	May 7, 2015
Priority date	May 10, 2012
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×10 17 spins/cm 3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a gate electrode layer;
a first gate insulating layer containing silicon and nitrogen adjacent to the gate electrode layer;
a second gate insulating layer containing silicon and nitrogen over the first gate insulating layer;
a first oxide semiconductor layer containing more indium than gallium adjacent to the second gate insulating layer; and
a second oxide semiconductor layer over the first oxide semiconductor layer.

2. The semiconductor device according to claim 1 , wherein a content of indium in the second oxide semiconductor layer is lower than or equal to a content of gallium.

3. The semiconductor device according to claim 1 , wherein the gate electrode layer contains copper.

4. The semiconductor device according to claim 1 , further comprising a source electrode layer and a drain electrode layer over the second oxide semiconductor layer.

5. The semiconductor device according to claim 1 , wherein the first gate insulating layer is provided over the gate electrode layer, and the first oxide semiconductor layer is provided over the second gate insulating layer.

6. The semiconductor device according to claim 1 , wherein the first gate insulating layer has a spin density of 1×10 17 spins/cm 3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy.

7. The semiconductor device according to claim 1 , wherein the second gate insulating layer has a lower hydrogen concentration than the first gate insulating layer.

8. The semiconductor device according to claim 1 , wherein the semiconductor device is one selected from the group consisting of a table having a display portion, a television device, a computer, and a tablet terminal.

9. A semiconductor device comprising:
a gate electrode layer;
a first gate insulating layer containing silicon and nitrogen adjacent to the gate electrode layer;
a second gate insulating layer containing silicon and nitrogen over the first gate insulating layer;
a first oxide semiconductor layer containing more indium than gallium adjacent to the second gate insulating layer; and
a second oxide semiconductor layer over the first oxide semiconductor layer,
wherein a thickness of the second gate insulating layer is smaller than a thickness of the first gate insulating layer.

10. The semiconductor device according to claim 9 , wherein a content of indium in the second oxide semiconductor layer is lower than or equal to a content of gallium.

11. The semiconductor device according to claim 9 , wherein the gate electrode layer contains copper.

12. The semiconductor device according to claim 9 , further comprising a source electrode layer and a drain electrode layer over the second oxide semiconductor layer.

13. The semiconductor device according to claim 9 , wherein the first gate insulating layer is provided over the gate electrode layer, and the first oxide semiconductor layer is provided over the second gate insulating layer.

14. The semiconductor device according to claim 9 , wherein the first gate insulating layer has a spin density of 1×10 17 spins/cm 3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy.

15. The semiconductor device according to claim 9 , wherein the second gate insulating layer has a lower hydrogen concentration than the first gate insulating layer.

16. The semiconductor device according to claim 9 , wherein the semiconductor device is one selected from the group consisting of a table having a display portion, a television device, a computer, and a tablet terminal.

Assignees

• Semiconductor Energy Lab

Inventors

• Miyamoto Toshiyuki
• Nomura Masafumi
• Hamochi Takashi
• Okazaki Kenichi

Classifications

• H10D30/6704 Primary

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title