Oxide semiconductor

Patent metadata

Field	Value
Publication number	US-8937306-B2
Application number	US-201313862528-A
Country	US
Kind code	B2
Filing date	Apr 15, 2013
Priority date	Jul 31, 2009
Publication date	Jan 20, 2015
Grant date	Jan 20, 2015

Abstract

In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a gate electrode layer over an insulating surface;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer comprising indium over the gate insulating layer, the oxide semiconductor layer comprising a channel formation region overlapping with the gate electrode layer with the gate insulating layer therebetween, wherein the oxide semiconductor layer has a stacked structure including a fir…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Akimoto Kengo
• Tsubuku Masashi
• Sasaki Toshinari
• Kuwabara Hideaki

Classifications

• H10D30/6757

  Electricity · mapped topic

• H10D30/6704 Primary

  Electricity · mapped topic

• H10D30/031

  Electricity · mapped topic

• H10D86/481

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic