Semiconductor device

Patent metadata

Field	Value
Publication number	US-9166061-B2
Application number	US-201414450997-A
Country	US
Kind code	B2
Filing date	Aug 4, 2014
Priority date	Dec 23, 2011
Publication date	Oct 20, 2015
Grant date	Oct 20, 2015

Abstract

Provided is a transistor which includes an oxide semiconductor film and has stable electrical characteristics. In the transistor, over an oxide film which can release oxygen by being heated, a first oxide semiconductor film which can suppress oxygen release at least from the oxide film is formed. Over the first oxide semiconductor film, a second oxide semiconductor film is formed. With such a structure in which the oxide semiconductor films are stacked, the oxygen release from the oxide film can be suppressed at the time of the formation of the second oxide semiconductor film, and oxygen can be released from the oxide film in later-performed heat treatment. Thus, oxygen can pass through the first oxide semiconductor film to be favorably supplied to the second oxide semiconductor film. Oxygen supplied to the second oxide semiconductor film can suppress the generation of oxygen deficiency, resulting in stable electrical characteristics.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film over the first oxide semiconductor film,
wherein the first oxide semiconductor film and the second oxide semiconductor film each comprises indium, gallium, and zinc,
wherein the first oxide semiconductor film has a lower content percentage of indium and a higher content percentage of gallium than the second oxide semiconductor film, and
wherein the second oxide semiconductor film comprises a crystal portion having a c-axis aligned in a direction parallel to a normal vector of a surface where the second oxide semiconductor film is formed.

2. The semiconductor device according to claim 1 , wherein the first oxide semiconductor film comprises a low-resistance region and a high-resistance region, the high-resistance region being located outside the second oxide semiconductor film.

3. The semiconductor device according to claim 1 , wherein the second oxide semiconductor film comprises a channel region and a pair of low-resistance regions in contact with the channel region.

4. The semiconductor device according to claim 1 , wherein either end of the second oxide semiconductor film in a channel width direction comprises a high-resistance region.

5. The semiconductor device according to claim 1 , wherein a content percentage of gallium is higher than or equal to a content percentage of indium in the first oxide semiconductor film.

6. The semiconductor device according to claim 1 , wherein a content percentage of indium is higher than a content percentage of gallium in the second oxide semiconductor film.

7. A semiconductor device comprising:
a first oxide semiconductor film over an oxide film;
a second oxide semiconductor film over the first oxide semiconductor film;
a gate insulating film over the second oxide semiconductor film; and
a gate electrode over the second oxide semiconductor film with the gate insulating film interposed therebetween,
wherein the first oxide semiconductor film and the second oxide semiconductor film each comprises indium, gallium, and zinc,
wherein the first oxide semiconductor film has a lower content percentage of indium and a higher content percentage of gallium than the second oxide semiconductor film, and
wherein the second oxide semiconductor film comprises a crystal portion having a c-axis aligned in a direction parallel to a normal vector of a surface where the second oxide semiconductor film is formed.

8. The semiconductor device according to claim 7 , wherein the first oxide semiconductor film comprises a low-resistance region and a high-resistance region, the high-resistance region being located outside the second oxide semiconductor film.

9. The semiconductor device according to claim 7 , wherein the second oxide semiconductor film comprises a channel region and a pair of low-resistance regions in contact with the channel region.

10. The semiconductor device according to claim 7 , wherein either end of the second oxide semiconductor film in a channel width direction comprises a high-resistance region.

11. The semiconductor device according to claim 7 , wherein a content percentage of gallium is higher than or equal to a content percentage of indium in the first oxide semiconductor film.

12. The semiconductor device according to claim 7 , wherein a content percentage of indium is higher than a content percentage of gallium in the second oxide semiconductor film.

13. The semiconductor device according to claim 7 , further comprising:
a source electrode and a drain electrode over the gate insulating film,
wherein the gate insulating film has a first opening and a second opening,
wherein the source electrode and a drain electrode are electrically connected to the second oxide semiconductor film through the first opening and the second opening, respectively, and
wherein the distance between the gate electrode and the first opening and the distance between the gate electrode and the second opening are different.

Assignees

• Semiconductor Energy Lab
• Semiconcductor Energy Lab Co Ltd

Inventors

• Yamazaki Shunpei

Classifications

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D62/405

  Orientations of crystalline planes · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6756

  Amorphous oxide semiconductors · CPC title