Semiconductor device

Patent metadata

Field	Value
Publication number	US-8946702-B2
Application number	US-201313860792-A
Country	US
Kind code	B2
Filing date	Apr 11, 2013
Priority date	Apr 13, 2012
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first gate electrode layer over an insulating surface;
a first insulating layer over the first gate electrode layer;
oxide semiconductor stacked layers comprising a first oxide semiconductor layer and a second oxide semiconductor layer and overlapping with the first gate electrode layer with the first insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers;…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Matsubayashi Daisuke
• Murayama Keisuke

Classifications

• H10D86/481

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D86/60 Primary

  Electricity · mapped topic

• H10D30/611

  Electricity · mapped topic

• H01L29/7869 Primary

  Electricity · mapped topic