Weir for inhibiting melt flow in a crucible

Patent metadata

Field	Value
Publication number	US-9863063-B2
Application number	US-201314107743-A
Country	US
Kind code	B2
Filing date	Dec 16, 2013
Priority date	Dec 18, 2012
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.

First claim

What is claimed is:

1. A system for growing a crystal ingot from a silicon melt, the system comprising:
a crucible having a base and a sidewall for containing the silicon melt therein, the base having a top surface; and
a weir located along the base of the crucible at a location inward from the sidewall, the weir having a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween, each leg having a bottom surface, wherein each leg extends downward from the body and engages the top surface of the base to prevent flow of the silicon melt between the bottom surface of the leg and the base, wherein each leg defines a passage therein for controlled movement of the silicon melt therethrough.

2. The system of claim 1 , wherein the body is formed as a single unit with at least one of the legs.

3. The system of claim 1 , wherein the legs include an inner leg and an outer leg.

4. The system of claim 3 , wherein the inner leg and the outer leg divide the silicon melt into an outer melt portion, an intermediate melt portion and an inner melt portion, the outer melt portion being located between the sidewall of the crucible and the outer leg, the intermediate portion being located between the outer leg and the inner leg, the inner melt portion being located inward from the inner leg.

5. The system of claim 1 , wherein each passage is located along a lower portion of the respective leg.

6. The system of claim 1 , wherein the passage of one of the legs is unaligned with the passages of another of the legs.

7. The system of claim 1 , further comprising a feed tube disposed adjacent the crucible for supplying a feedstock material to the crucible, and a computing device for controlling a feed rate of the feedstock material through the feed tube.

8. The system of claim 1 , further comprising a puller system for lowering and raising a seed crystal into and out of the silicon melt.

9. The system of claim 1 , further comprising a heater disposed for supplying heat to the crucible to maintain the silicon melt therein, and a controller for adjusting the amount of heat provided by the heater to the crucible.

10. A method for growing a crystal ingot, the method comprising:
providing a crucible with a weir, the weir having an inner leg and an outer leg forming a space therebetween placing a feedstock material into the crucible at a location that is outward of the weir;
melting the feedstock material to form a melt able to flow to a location that is inward of the weir, wherein each leg engages a top surface of a base of the crucible to prevent flow of the melt between a bottom surface of the leg and the base, and wherein each leg defines a passage therein for controlled movement of the melt therethrough; and
causing the melt to cool to form a crystal ingot.

11. The method of claim 10 , wherein providing a crucible with a weir comprises providing a crucible with a weir including a body extending upward from the inner leg and the outer leg for separating an outer area of the crucible from an inner area of the crucible.

12. The method of claim 11 , wherein providing a crucible with a weir comprises providing a crucible with a weir including a body extending upward from one of the inner leg and the outer leg.

13. The method of claim 10 , further comprising directing the melt to flow through the passages.

14. The method of claim 10 , further comprising measuring a temperature of the melt at a location immediately adjacent the forming crystal ingot.

15. The method of claim 10 , wherein the forming of the crystal ingot is performed simultaneously with placing the feedstock material into the crucible.

16. The method of claim 10 , further comprising placing a heater adjacent to the crucible for melting the feedstock material therein.

Assignees

• Sunedison Inc
• Corner Star Ltd

Inventors

• Swaminathan Tirumani N

Classifications

• C30B11/002

  Crucibles or containers for supporting the melt · CPC title

• C30B15/002

  Continuous growth · CPC title

• C30B15/12 Primary

  Double crucible methods · CPC title

• Y10T117/1052

  including a sectioned crucible [e.g., double crucible, baffle] · CPC title