Semiconductor device, related manufacturing method, and related electronic device

Patent metadata

Field	Value
Publication number	US-9352957-B2
Application number	US-201514809642-A
Country	US
Kind code	B2
Filing date	Jul 27, 2015
Priority date	Jul 30, 2014
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, the method comprising:
providing a first substrate structure that has a trench;
providing a getter in the trench, wherein the getter overlaps a first portion of a bottom surface of the trench; and
after the getter has been provided in the trench, combining the first substrate structure with a second substrate structure that includes an inductor, wherein the inductor overlaps a second portion of the bottom surface of the trench without overlapping the getter in a direction perpendicular to the bottom surface of the trench.

2. The method of claim 1 , comprising: forming protrusions at a first side of the getter, wherein a second side of the getter is positioned between the first side of the getter and the bottom surface of the trench.

3. The method of claim 1 , comprising:
providing a getter material layer that covers a bottom surface of the trench;
performing a roughening treatment on the getter material layer; and
after the roughening treatment, etching the getter material layer to form the getter.

4. The method of claim 3 , wherein the getter material layer covers a side surface of the trench, and wherein the getter overlaps the side surface of the trench in a direction perpendicular to the side surface of the trench.

5. The method of claim 1 , further comprising: after the getter has been provided in the trench and before the combining the first substrate structure with the second substrate structure, performing a cleaning process on the first substrate structure.

6. The method of claim 1 , wherein the first substrate structure includes a substrate member and a mask member connected to the substrate member, wherein the substrate member is formed of a first material, wherein the mask member is formed of a second material different from the first material, and wherein the getter directly contacts both the substrate member and the mask member.

7. The method of claim 1 , comprising:
providing a getter material member in the trench, wherein a portion of the getter material member covers a side surface of the trench and a second portion of the bottom surface of the trench; and
removing the portion of the getter material member to obtain the getter.

8. The method of claim 1 , comprising:
providing a mask layer on a composite structure that includes a substrate material member, a mask member positioned on the substrate material member, and a bonding material member positioned on the mask member, wherein the mask layer covers at least three sides of the bonding material member;
etching the substrate material member through the mask layer to obtain the first substrate structure, wherein the mask layer exposes the trench;
providing a getter material layer that covers the mask layer and the bottom surface of the trench;
removing the mask layer and a portion of the getter material layer that covers the mask layer to form a getter material member, wherein a first portion of the getter material member covers a second portion of the bottom surface of the trench, wherein a portion of the mask member is positioned between the first portion of the getter material member and a second portion of the getter material member; and
removing at least the first portion of the getter material member and the second portion of the getter material member to obtain the getter.

9. The method of claim 8 , wherein the mask layer directly contacts both the mask member and the bonding material member before the mask layer is removed.

Assignees

• Semiconductor Mfg Int Shanghai

Inventors

• Zheng Chao
• Ma Junde
• Guo Liangliang
• Wang Wei

Classifications

• H10W76/12

  characterised by their shape · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10W76/48 Primary

  Fillings including materials for absorbing or reacting with moisture or other undesired substances · CPC title

• H10D1/20

  Inductors · CPC title

• B81B7/0038 Primary

  using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title