Plasma etching method and plasma etching apparatus

Patent metadata

Field	Value
Publication number	US-9349574-B2
Application number	US-201314414946-A
Country	US
Kind code	B2
Filing date	Aug 5, 2013
Priority date	Aug 9, 2012
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.

First claim

We claim:

1. A plasma etching method comprising:
a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern and is formed on a target object, with plasma generated from a hydrogen-containing gas; and
an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask,
wherein each of the plasma process and the etching process is repeated at least two or more times.

2. The plasma etching method of claim 1 ,
wherein
a processing time of the plasma process performed for a first time is longer than a processing time of the plasma process performed for a second time or later.

3. The plasma etching method of claim 1 ,
wherein the hydrogen-containing gas contains at least one of a H 2 gas, a H 2 /Ar gas, a HBr gas, a H 2 /N 2 gas, a N 2 gas, and a H 2 /N 2 /CH 4 gas.

4. The plasma etching method of claim 1 ,
wherein the CF-based gas is a CF 4 gas and the gas containing the CHF-based gas is a CHF 3 gas.

5. The plasma etching method of claim 1 ,
wherein each of the plasma process and the etching process is performed for a predetermined time or more.

6. The plasma etching method of claim 1 ,
wherein the plasma process is performed at a lower pressure than the etching process.

7. The plasma etching method of claim 1 ,
wherein a temperature of the target object in the plasma process is higher than a temperature of the target object in the etching process.

8. A plasma etching apparatus comprising:
a chamber configured to perform a plasma etching process to a target object;
an exhaust unit configured to decompress an inside of the chamber;
a gas supply unit configured to supply a processing gas into the chamber; and
a control unit configured to control such that a surface of a photoresist formed on the target object is plasma-processed with plasma generated from a hydrogen-containing gas in a plasma process, and then a silicon-containing film on the target object is etched with a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask in an etching process,
wherein the control unit is configured to control that each of the plasma process and the etching process is repeated at least two or more times.

Assignees

• Tokyo Electron Ltd

Inventors

• Yoshida Ryoichi
• Ishii Takayuki
• Kobayashi Ken

Classifications

• H10P76/204 Primary

  of organic photoresist masks · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H01J37/32688

  Multi-cusp fields · CPC title

• H01J37/3266

  Magnetic control means · CPC title