Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Methods of forming nanostructures including metal oxides
US9177795B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9177795-B2 |
| Application number | US-201314040245-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 27, 2013 |
| Priority date | Sep 27, 2013 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming nanostructures, comprising: forming a block copolymer composition within a trench in a material on a substrate, the block copolymer composition comprising a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block…
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Electricity · mapped topic
- H10P76/4085Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9177795B2 cover?
- A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the blo…
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P76/4085. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).