Semiconductor lasers and etched-facet integrated devices having non-uniform trenches

Patent metadata

Field	Value
Publication number	US-9306373-B2
Application number	US-201313768404-A
Country	US
Kind code	B2
Filing date	Feb 15, 2013
Priority date	Feb 15, 2013
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows.

First claim

What is claimed is:

1. An edge-emitting optical semiconductor device, comprising:
a substrate;
an active multiple quantum well (MQW) region formed on the substrate;
a first ridge waveguide extending between a first end facet disposed in a first window and a second end facet disposed in a second window, the first ridge waveguide formed over the active MQW region; and
a first trench extending longitudinally between the first and second windows and extending down to the substrate through the active MQW region, the first trench having a first wider mid-portion than opposing end portions, wherein the first wider mid-portion is configured to promote an even distribution of a material along a length of the first trench by preventing pooling of the material in the first and second windows during depositing of the material in the first trench.

2. The edge-emitting optical semiconductor device of claim 1 , wherein the first ridge waveguide is substantially aligned with a longitudinal axis extending between the first end facet and the second end facet, and wherein a first wall of a pair of opposing first and second walls of the first trench extends linearly between the first and second windows substantially parallel to the first ridge waveguide.

3. The edge-emitting optical semiconductor device of claim 2 , wherein the first wall is closer to the first ridge waveguide than the second wall.

4. The edge-emitting optical semiconductor device of claim 1 , wherein the first trench extends parallel to a first longitudinal edge of the first ridge waveguide, and further comprising:
a second trench that extends parallel to an opposing longitudinal edge of the first ridge waveguide, the second trench extending down to the substrate through the active MQW region.

5. The edge-emitting optical semiconductor device of claim 1 , wherein:
the first trench further comprises a trench transition portion between the mid-portion of the first trench and each end portion of the first trench, the trench transition portion having at least one width different from a width of the first wider mid-portion.

6. The edge-emitting optical semiconductor device of claim 1 , further comprising:
a second ridge waveguide extending between a third end facet disposed in a third window and the second end facet that is disposed in the second window, the second ridge waveguide formed over the active MQW region, thereby sharing with the first ridge waveguide, the second window and the active MQW region; and
a second trench extending between the second and third windows, the second trench having a second wider mid-portion than opposing end portions, wherein the second wider mid-portion is configured to promote uniform thickness in the layer of material deposited in the second trench by preventing pooling of the material in the second and third windows during depositing of the material in the second trench.

7. The edge-emitting optical semiconductor device of claim 1 , wherein the material deposited in the first trench is a photoresist material that tends to flow into the first and second windows during depositing of the photoresist material in the first trench.

8. The edge-emitting optical semiconductor device of claim 7 , wherein the first wider mid-portion promotes the even distribution of the photoresist material along the length of the first trench by absorbing a portion of the photoresist material during depositing of the photoresist material in the first trench.

9. The edge-emitting optical semiconductor device of claim 8 , wherein the first wider mid-portion has a width that is between two times and three times a width of each of the opposing end portions.

10. An edge-emitting optical semiconductor device, comprising:
A substrate;
an active multiple quantum well (MQW) region formed on the substrate;
a first ridge waveguide extending between a first end facet disposed in a first window and a second end facet disposed in a second window, the first ridge waveguide formed over the active MQW region; and
a first trench extending between the first and second windows and extending down to the substrate through the active MQW region, the first trench comprising a mid-portion having a larger volume than opposing end portions, the larger volume of the mid-portion defined on the basis of reducing a buildup of a material in the mid-portion of the first trench during depositing of the material in the first trench.

11. The edge-emitting optical semiconductor device of claim 10 , wherein the material deposited in the first trench is a photoresist material that flows into the mid-portion of the first trench during depositing of the material, and the larger volume of the mid-portion promotes uniform thickness of the photoresist material along the length of the first trench by retaining a portion of the photoresist material in the mid-portion.

12. The edge-emitting optical semiconductor device of claim 10 , wherein the first ridge waveguide is substantially aligned with a longitudinal axis extending between the first end facet and the second end facet of the edge-emitting optical semiconductor device, and wherein a first wall of a pair of opposing first and second walls of the first trench extends linearly between the first and second windows substantially parallel to the first ridge waveguide.

13. The edge-emitting optical semiconductor device of claim 10 , wherein the larger volume of the mid-portion is defined at least in part, on the basis of a width of the mid-portion.

14. The edge-emitting optical semiconductor device of claim 13 , wherein the width of the mid-portion is between two times and three times a width of each of the opposing end portions.

15. The edge-emitting optical semiconductor device of claim 10 , wherein the larger volume of the mid-portion is defined on the basis of a length of the mid-portion multiplied by a width of the mid-portion and further multiplied by a depth of the mid-portion.

16. An edge-emitting optical semiconductor device, comprising:
a first ridge waveguide extending from a first end facet to a second end facet, the first ridge waveguide located above a multiple quantum well (MQW) layer; and
a first trench extending from the first end facet to the second end facet and arranged substantially parallel to the first ridge waveguide, the first trench extending down to a substrate through the MQW layer and having a first wider mid-portion than opposing end portions, the first wider mid-portion having a volume defined on the basis of reducing a buildup of a material in the first wider mid-portion during fabrication of the edge-emitting optical semiconductor device.

17. The edge-emitting optical semiconductor device of claim 16 , wherein the first trench extends substantially parallel to a first longitudinal edge of the first ridge waveguide, and further comprising:
a second trench extending from the first end facet to the second end facet and arranged substantially parallel to an opposing longitudinal edge of the first ridge waveguide, the second trench extending down to the substrate through the MQW layer.

18. The edge-emitting optical semiconductor device of claim 17 , wherein the first trench and the second trench are configured to isolate an active region of the MQW layer.

Assignees

• Avago Technologies General Ip

Inventors

• Fang Ruiyu
• Rossi Giammarco
• Paoletti Roberto

Classifications

• H01S5/2202 Primary

  by making a groove in the upper laser structure · CPC title

• H01S5/0201

  Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth · CPC title

• H01S5/343

  in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser} · CPC title

• H01S5/1014

  Tapered waveguide, e.g. spotsize converter (H01S5/1064 takes precedence) · CPC title

• H01S5/1082

  with a special facet structure, e.g. structured, non planar, oblique · CPC title