Semiconductor laser device and laser light irradiation apparatus

Patent metadata

Field	Value
Publication number	US-10439361-B2
Application number	US-201715671812-A
Country	US
Kind code	B2
Filing date	Aug 8, 2017
Priority date	Feb 12, 2015
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

First claim

The invention claimed is:

1. A semiconductor laser device comprising:
a semiconductor layer portion having an active layer and performing multi-mode oscillation of laser light,
wherein
the semiconductor layer portion includes a first region and a second region, the second region being located closer to a facet on a laser light radiation side than the first region,
the first region and the second region include a stripe region in which the laser light is guided,
the stripe region has a width of 80 μm or more, the width being along a traversal direction orthogonal to a longitudinal direction of the stripe region,
a second optical confinement effect of the laser light in the traversal direction to a second portion of the stripe region in the second region is less than a first optical confinement effect of the laser light in the traversal direction to a first portion of the stripe region in the first region,
the semiconductor layer portion includes a current non-injection region, into which no current is injected, adjacent to the facet on the laser light radiation side, and
a length of the current non-injection region along a laser light radiation direction is less than a length of the second region along the laser light radiation direction.

2. The semiconductor laser device according to claim 1 , wherein the second portion of the stripe region in the second region has no optical confinement effect of the laser light in the traversal direction.

3. The semiconductor laser device according to claim 1 , wherein the length of the second region along the laser light radiation direction is 100 μm or more.

4. The semiconductor laser device according to claim 1 , wherein the length of the second region along the laser light radiation direction is 150 μm or more and 250 μm or less.

5. The semiconductor laser device according to claim 1 , wherein the semiconductor layer portion further includes a second current non-injection region, into which no current is injected, adjacent to a facet opposite to the facet on the laser light radiation side.

6. The semiconductor laser device according to claim 1 , wherein the second region is formed so as to include the facet on the laser light radiation side.

7. The semiconductor laser device according to claim 1 , wherein the second region is formed separately from the facet on the laser light radiation side.

8. A laser light irradiation apparatus comprising the semiconductor laser device according to claim 1 .

9. A semiconductor laser device comprising:
a semiconductor layer portion having an active layer and performing multi-mode oscillation of laser light,
wherein
the semiconductor layer portion includes a first region and a second region, the second region being located closer to a facet on a laser light radiation side than the first region,
the first region and the second region include a stripe region in which the laser light is guided,
the stripe region has a width of 80 μm or more, the width being along a traversal direction orthogonal to a longitudinal direction of the stripe region,
a second optical confinement effect of the laser light in the traversal direction to a second portion of the stripe region in the second region is less than a first optical confinement effect of the laser light in the traversal direction to a first portion of the stripe region in the first region, and
the semiconductor layer portion includes a current non-injection region, into which no current is injected, adjacent to a facet opposite to the facet on the laser light radiation side.

10. The semiconductor laser device according to claim 9 , wherein the second portion of the stripe region in the second region has no optical confinement effect of the laser light in the traversal direction.

11. The semiconductor laser device according to claim 9 , wherein a length of the second region along a laser light radiation direction is 100 μm or more.

12. The semiconductor laser device according to claim 9 , wherein a length of the second region along a laser light radiation direction is 150 μm or more and 250 μm or less.

13. The semiconductor laser device according to claim 9 , wherein the second region is formed so as to include the facet on the laser light radiation side.

14. The semiconductor laser device according to claim 9 , wherein the second region is formed separately from the facet on the laser light radiation side.

15. A laser light irradiation apparatus comprising the semiconductor laser device according to claim 9 .

Assignees

• Furukawa Electric Co Ltd

Inventors

• Ohki Yutaka
• Umeno Kazuyuki
• Minato Ryuichiro

Classifications

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/0287

  Facet reflectivity · CPC title

• H01S5/168

  with window regions comprising current blocking layers · CPC title

• H01S5/1017 Primary

  Waveguide having a void for insertion of materials to change optical properties · CPC title

• H01S5/24

  having a grooved structure, e.g. V-grooved {, crescent active layer in groove, VSIS laser} · CPC title