Laser device and method of manufacturing the same
US-2024364074-A1 · Oct 31, 2024 · US
in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser} · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01S5/343 |
| Official title | in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser} |
| Display label | in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser} |
| Total patents | 647 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 43 |
| 2016 | 55 |
| 2017 | 54 |
| 2018 | 67 |
| 2019 | 93 |
| 2020 | 69 |
| 2021 | 72 |
| 2022 | 52 |
| 2023 | 52 |
| 2024 | 47 |
| 2025 | 35 |
| 2026 | 8 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Controlling the emission wavelength in group iii-v semiconductor laser diodes
US-2016380409-A1 · Dec 29, 2016 · US
Light Emitting Structures with Multiple Uniformly Populated Active Layers
US-2016359086-A1 · Dec 8, 2016 · US
Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer
US-2016315219-A1 · Oct 27, 2016 · US
Photonic circuit device with on-chip optical gain measurement structures
US-2016252692-A1 · Sep 1, 2016 · US
Semiconductor device and fabrication method
US-2016233647-A1 · Aug 11, 2016 · US
Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material
US-9395489-B2 · Jul 19, 2016 · US
Compact distributed bragg reflectors
US-9337622-B2 · May 10, 2016 · US
Semiconductor-laser-device assembly
US-2016111857-A1 · Apr 21, 2016 · US
Hybrid laser including anti-resonant waveguides
US-2016111858-A1 · Apr 21, 2016 · US
Ultraviolet light emitting diode structures and methods of manufacturing the same
US-9318652-B1 · Apr 19, 2016 · US
Complementary metal oxide semiconductor device with iii-v optical interconnect having iii-v epitaxially formed material
US-2016103278-A1 · Apr 14, 2016 · US
Nitride semiconductor laser element
US-9312659-B2 · Apr 12, 2016 · US
Semiconductor interband lasers and method of forming
US-9287683-B2 · Mar 15, 2016 · US
Electron beam pumped vertical cavity surface emitting laser
US-2016049771-A1 · Feb 18, 2016 · US
Optical semiconductor device
US-9257815-B1 · Feb 9, 2016 · US
Multi-beam semiconductor laser device
US-9231374-B2 · Jan 5, 2016 · US
Photonic circuit device with reduced losses caused by electrical contact pads
US-2015380905-A1 · Dec 31, 2015 · US
Optical semiconductor device and method of manufacturing the same
US-9225147-B2 · Dec 29, 2015 · US
Nitride semiconductor device
US-2015364649-A1 · Dec 17, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01S5/343?
- CPC H01S5/343 is the Cooperative Patent Classification code for “in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}.”
- How many patents are filed under CPC H01S5/343 (in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser})?
- Our database includes 647 publications tagged with this CPC code.
- Is patent activity under CPC H01S5/343 growing?
- Publication counts under this code: 47 in 2024 vs 35 in 2025 (latest complete years).