Surface emitting semiconductor laser

Patent metadata

Field	Value
Publication number	US-10128633-B2
Application number	US-201815888850-A
Country	US
Kind code	B2
Filing date	Feb 5, 2018
Priority date	Mar 17, 2017
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

A surface emitting semiconductor laser includes a post disposed on a substrate, the post including an active layer and a distributed Bragg reflector; a first insulating layer disposed on side and top surfaces of the post and on the substrate, the first insulating layer having an opening on the top surface of the post; an electrode disposed in the opening of the first insulating layer; an electric conductor including a pad electrode on the first insulating layer, the electric conductor extending on the first insulating layer to the electrode; and a second insulating layer disposed on the first insulating layer, the electrode, and the electric conductor so as to cover the electrode in the opening of the first insulating layer, the second insulating layer having an opening on the pad electrode, the opening of the second insulating layer having an edge on a top surface of the pad electrode.

First claim

What is claimed is:

1. A surface emitting semiconductor laser comprising:
a substrate having a principal surface including a first area and a second area surrounding the first area;
a post disposed on the first area of the substrate, the post including a stacked semiconductor layer including an active layer and a distributed Bragg reflector;
a first insulating layer disposed on a side surface of the post and on the first and second areas of the substrate, the first insulating layer having a first opening on a top surface of the post;
a first electrode disposed in the first opening of the first insulating layer, the first electrode being in contact with the top surface of the post;
a first electric conductor including a first pad electrode on the first insulating layer in the second area, the first electric conductor extending on the first insulating layer to the first electrode so as to connect the first pad electrode to the first electrode; and
a second insulating layer disposed on the first insulating layer, the first electrode, and the first electric conductor so as to cover the first electrode in the first opening of the first insulating layer, the second insulating layer having a first opening on the first pad electrode, the first opening of the second insulating layer having an edge on a top surface of the first pad electrode.

2. The surface emitting semiconductor laser according to claim 1 , further comprising:
an electrically conductive semiconductor region disposed on the principal surface of the substrate, the post being disposed on the electrically conductive semiconductor region in the first area of the substrate;
a second electrode disposed on the electrically conductive semiconductor region; and
a second electric conductor including a second pad electrode on the first insulating layer in the second area, the second electric conductor extending on the first insulating layer to the second electrode so as to connect the second pad electrode to the second electrode,
wherein the first insulating layer has a second opening separated from the post,
the second electrode is in contact with the electrically conductive semiconductor region through the second opening of the first insulating layer, and
the second insulating layer has a second opening on the second pad electrode.

3. The surface emitting semiconductor laser according to claim 2 , further comprising:
a terrace disposed on the second area, the terrace including the first pad electrode thereon; and
a groove that separates the terrace from the post,
wherein the second opening of the first insulating layer is disposed at a bottom of the groove.

4. The surface emitting semiconductor laser according to claim 1 , further comprising:
an electrically conductive semiconductor layer on the principal surface of the substrate, the post being disposed on the electrically conductive semiconductor layer in the first area of the substrate; and
a back electrode disposed on a back surface of the substrate,
wherein the substrate is made of an electrically conductive semiconductor, and
the back electrode is electrically connected to the electrically conductive semiconductor layer through the substrate.

5. The surface emitting semiconductor laser according to claim 1 , further comprising a third insulating layer disposed on the top surface of the post,
wherein the first electrode has an opening on the top surface of the post,
the third insulating layer is disposed in the opening of the first electrode,
the third insulating layer is in contact with the top surface of the post, and
the second insulating layer is disposed on the third insulating layer.

6. The surface emitting semiconductor laser according to claim 5 , wherein the second insulating layer and the third insulating layer constitute a high reflection film.

7. The surface emitting semiconductor laser according to claim 1 , wherein
the principal surface of the substrate includes a third area surrounding the second area,
the third area is not covered with the first insulating layer and the second insulating layer,
the first insulating layer is disposed on the second area so as to surround the first area, and
the second insulating layer covers an outer edge of the first insulating layer.

8. The surface emitting semiconductor laser according to claim 7 , wherein the third area includes a scribing groove.

Assignees

• Sumitomo Electric Industries

Inventors

• Koyama Yuji
• Yanagisawa Masaki
• Tsuji Yukihiro
• Kobayashi Hirohiko
• Yoshinaga Hiroyuki

Classifications

• H01S5/04257

  having positive and negative electrodes on the same side of the substrate · CPC title

• H01S5/0282

  Passivation layers or treatments · CPC title

• H01S5/04256

  characterised by the configuration · CPC title

• H01S5/18377

  comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers · CPC title

• H01S5/34313

  with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title