Edge ring configurations for processing chambers and related chamber kits and methods

Patent metadata

Field	Value
Publication number	US-2025379096-A1
Application number	US-202418738960-A
Country	US
Kind code	A1
Filing date	Jun 10, 2024
Priority date	Jun 10, 2024
Publication date	Dec 11, 2025
Grant date	—

Abstract

Embodiments of the present disclosure relate to multi-section substrate supports, and related process kits, processing chambers, components, and methods for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body, one or more heat sources, a support, and an edge ring. The chamber body includes a processing volume, one or more gas inject passages formed in the chamber body, and one or more gas exhaust passages formed in the chamber body. The one or more heat sources are operable to heat the processing volume. The support is disposed in the processing volume, and the edge ring is at least partially supported by the support. The edge ring includes an annular section, and a shoulder abutting against the support to position the annular section at a gap from the support. The edge ring defines an inner portion that is sized and shaped to support a substrate.

First claim

What is claimed is:

1 . A processing chamber applicable for semiconductor manufacturing, comprising:
a chamber body comprising:
a processing volume,
one or more gas inject passages formed in the chamber body, and
one or more gas exhaust passages formed in the chamber body;
one or more heat sources operable to heat the processing volume;
a support disposed in the processing volume; and
an edge ring supported at least partially by the support, the edge ring defining an inner portion, the inner portion sized and shaped to support a substrate, the edge ring comprising:
an annular section, and
a shoulder abutting against the support to position the annular section at a gap from the support.

2 . The processing chamber of claim 1 , wherein the support is a first curved support sized and shaped for positioning within a first pre-heat ring, and the processing chamber further comprises:
a second curved support spaced from the first curved support, the second curved support sized and shaped for positioning within a second pre-heat ring; a second edge ring supported at least partially by the second curved support, the second edge ring having a thickness that is less than half of a thickness of the second pre-heat ring; and a plate disposed between the first curved support and the second curved support.

3 . The processing chamber of claim 1 , wherein the support includes a disc comprising a groove, the edge ring disposed in the groove.

4 . The processing chamber of claim 3 , wherein the support comprises a top surface of a central region, the top surface disposed between a groove surface of the groove and the annular section of the edge ring.

5 . The processing chamber of claim 4 , wherein the edge ring further comprises:
an inner shelf extending radially inward, a distance between the top surface and the inner shelf being less than a distance between the annular section and groove surface.

6 . The processing chamber of claim 5 , wherein the inner shelf and the shoulder respectively have a thickness that is less than 1.0 mm.

7 . The processing chamber of claim 1 , wherein the support comprises a shelf, the edge ring disposed on the shelf, and a thickness of the annular section of the edge ring less than a thickness of the shelf.

8 . A chamber kit applicable for semiconductor manufacturing, comprising:
a support; and an edge ring sized and shaped for disposition on the support, the edge ring comprising:
a shoulder;
an inner shelf extending radially inward of the shoulder, the inner shelf defining an inner portion, the inner portion sized and shaped to support a substrate;
an annular section between the inner shelf and the shoulder, the shoulder sized and shaped to abut against the support to position the annular section at a gap from the support; and
a recess between the shoulder and the inner shelf.

9 . The chamber kit of claim 8 , wherein the support is a first curved support, the edge ring is a first edge ring, and the chamber kit further comprises:
a second curved support; a second edge ring sized and shaped for disposition on the second curved support; and a plate disposed between the first edge ring and the second edge ring.

10 . The chamber kit of claim 9 , wherein the shoulder of the first edge ring is sized and shaped to abut against a shelf of the first curved support.

11 . The chamber kit of claim 9 , wherein the plate is disposed on a third curved support, the third curved support disposed between the first curved support and the second curved support.

12 . The chamber kit of claim 11 , wherein a post of the first curved support is radially aligned and disposed radially outward of a post of the third curved support.

13 . The chamber kit of claim 9 , wherein a third curved support comprises a receptacle opening sized and shaped to receive a post of the first curved support.

14 . The chamber kit of claim 9 , wherein first edge ring comprises a material having a specific heat of 730 J/Kg-K or less and a density of 2,500 Kg/m 3 or less.

15 . The chamber kit of claim 14 , wherein the material includes graphite coated with silicon carbide.

16 . The chamber kit of claim 8 , wherein the support comprises a shelf, the edge ring disposed thereon, the shelf extending radially inward by at least half a width of the annular section.

17 . The chamber kit of claim 9 , wherein the edge ring has a mass of less than 100 grams.

18 . The chamber kit of claim 8 , wherein the support further comprises a shelf, the shelf extending radially inward by at least half of a width of the annular section of the edge ring.

19 . A method of processing a substrate, the method comprising:
positioning a substrate in a processing volume of a chamber, positioning a substrate comprises disposing a substrate on an inner portion of an edge ring, the edge ring comprising: an annular section, and a shoulder abutting against a support to position the annular section at a gap from the support to separate the substrate from the support; heating the substrate; and performing an epitaxial operation on the substrate.

20 . The method of claim 19 , wherein the substrate is disposed on an inner shelf of the edge ring, the edge ring comprises:
a recess between a shoulder and the inner shelf; and an annular section between the inner shelf and the shoulder, the annular section, the inner shelf and the shoulder partially defining the recess.

Assignees

• Applied Materials Inc

Inventors

• Dhamodharan Raja Murali
• Lau Shu-Kwan
• Zhu Zuoming
• Mohanadass Kalaivanan
• Patil Aniketnitin

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P72/7611 Primary

  characterised by edge profile or support profile · CPC title

• C30B25/14

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title

• C30B25/10

  Heating of the reaction chamber or the substrate · CPC title

• C30B25/12

  Substrate holders or susceptors · CPC title