Indexed gas jet injector for substrate processing system
US-2015376793-A1 · Dec 31, 2015 · US
Feed and outlet means for the gases; Modifying the flow of the reactive gases
Feed and outlet means for the gases; Modifying the flow of the reactive gases · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B25/14 |
| Official title | Feed and outlet means for the gases; Modifying the flow of the reactive gases |
| Display label | Feed and outlet means for the gases; Modifying the flow of the reactive gases |
| Total patents | 801 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 67 |
| 2016 | 58 |
| 2017 | 73 |
| 2018 | 70 |
| 2019 | 53 |
| 2020 | 47 |
| 2021 | 66 |
| 2022 | 54 |
| 2023 | 73 |
| 2024 | 107 |
| 2025 | 99 |
| 2026 | 34 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
One-piece injector assembly and one-piece exhaust liner
US-2015368830-A1 · Dec 24, 2015 · US
Apparatus for gas injection to epitaxial chamber
US-2015368796-A1 · Dec 24, 2015 · US
Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition
US-2015361582-A1 · Dec 17, 2015 · US
Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template
US-2015357416-A1 · Dec 10, 2015 · US
Uniformity and selectivity of low gas flow velocity processes in a cross flow epitaxy chamber with the use of alternative highly reactive precursors though an alternative path
US-2015329969-A1 · Nov 19, 2015 · US
Low volume showerhead with porous baffle
US-2015315706-A1 · Nov 5, 2015 · US
Apparatus for delivering precursor gases to an epitaxial growth substrate
US-9175419-B2 · Nov 3, 2015 · US
Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate
US-9177799-B2 · Nov 3, 2015 · US
Deposition systems having interchangeable gas injectors and related methods
US-2015292088-A1 · Oct 15, 2015 · US
Manufacturing apparatus and method for semiconductor device
US-9150981-B2 · Oct 6, 2015 · US
Vapor phase growth apparatus and vapor phase growth method
US-2015279659-A1 · Oct 1, 2015 · US
Gas supply pipe, and gas treatment equipment
US-2015275369-A1 · Oct 1, 2015 · US
Cubic silicon carbide film manufacturing method, cubic silicon carbide film-attached substrate manufacturing method, and power device by use of the cubic silicon carbide film
US-2015275394-A1 · Oct 1, 2015 · US
Epitaxial growth systems
US-2015259826-A1 · Sep 17, 2015 · US
Ceiling portion for epitaxial growth apparatus
US-2015252493-A1 · Sep 10, 2015 · US
Lower side wall for epitaxial growth apparatus
US-2015252492-A1 · Sep 10, 2015 · US
Epitaxial chamber with cross flow
US-9127360-B2 · Sep 8, 2015 · US
Low-temperature selective epitaxial growth of silicon for device integration
US-2015247259-A1 · Sep 3, 2015 · US
Upper dome with injection assembly
US-2015233016-A1 · Aug 20, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B25/14?
- CPC C30B25/14 is the Cooperative Patent Classification code for “Feed and outlet means for the gases; Modifying the flow of the reactive gases.”
- How many patents are filed under CPC C30B25/14 (Feed and outlet means for the gases; Modifying the flow of the reactive gases)?
- Our database includes 801 publications tagged with this CPC code.
- Is patent activity under CPC C30B25/14 growing?
- Publication counts under this code: 107 in 2024 vs 99 in 2025 (latest complete years).