Susceptor for epitaxial processing and epitaxial reactor including the susceptor

Patent metadata

Field	Value
Publication number	US-2024006225-A1
Application number	US-202318327546-A
Country	US
Kind code	A1
Filing date	Jun 1, 2023
Priority date	Jun 30, 2022
Publication date	Jan 4, 2024
Grant date	—

Abstract

A susceptor for supporting a semiconductor wafer in a heated chamber includes a body that has a front surface, a rear surface, and a central plane between the front and rear surfaces. The susceptor also includes a recess that extends into the body from the front surface to a recess floor and a ledge that circumscribes the recess floor in the recess. The ledge includes a first surface oriented at a first angle relative to a horizontal plane parallel to the central plane, a second surface that extends radially inward from the first surface, the second surface optionally oriented at a second acute angle relative to the horizontal plane, and a third surface that extends between the second surface and the recess floor, the third surface oriented at a third acute angle relative to the horizontal plane. Each of the first, second, and third surfaces extends circumferentially along the ledge.

First claim

What is claimed is:

1 . A susceptor supporting a semiconductor wafer in a heated chamber, the semiconductor wafer comprising a forward surface, a back surface, and a peripheral edge joining the forward and back surfaces, the susceptor comprising:
a body having a front surface, a rear surface opposite the front surface, and a central plane extending between the front surface and the rear surface; a recess extending into the body from the front surface to a recess floor, the rec…

Assignees

• Globalwafers Co Ltd

Inventors

• Hamano Manabu
• Tu Chun-Chin

Classifications

• H10P72/7611 Primary

  Electricity · mapped topic

• H01L21/68735 Primary

  Electricity · mapped topic

• C30B25/12

  Chemistry & Metallurgy · mapped topic