Substrate treating apparatus and substrate support unit

Patent metadata

Field	Value
Publication number	US-2025166977-A1
Application number	US-202519033324-A
Country	US
Kind code	A1
Filing date	Jan 21, 2025
Priority date	Aug 7, 2020
Publication date	May 22, 2025
Grant date	—

Abstract

The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.

First claim

What is claimed is:

1 . A substrate support unit provided in an apparatus for treating a substrate using plasma, the substrate support unit comprising:
a dielectric plate on which the substrate is placed; a lower electrode disposed under the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, the through-hole having a third diameter, wherein the first gap increases farther away from the power supply rod.

2 . The substrate support unit of claim 1 , wherein an upper surface of the plate portion includes an inner area, which is a region closer to the through-hole, and an outer area, which is a region farther from the through-hole than the inner area, and wherein a height of the inner area is greater than a height of the outer area.

3 . The substrate support unit of claim 2 , wherein a lower surface of the lower electrode is formed to be flat.

4 . The substrate support unit of claim 3 , wherein an upper surface of the plate portion decreases in height from the inner area toward the outer area.

5 . The substrate support unit of claim 1 , wherein the ground member further includes a guide portion extending upward from an inner diameter of the through-hole by a predetermined length and spaced apart from the power supply rod by a second gap.

6 . The substrate support unit of claim 5 , wherein an upper end of the guide portion is formed to have a height greater than a height of the upper surface of the plate portion.

7 . The substrate support unit of claim 1 , wherein the lower electrode and the ground member are spaced apart from each other by the insulating member, and an air gap is formed between the lower electrode and the ground member, the air gap electrically insulating the ground member from the lower electrode.

8 . The substrate support unit of claim 1 , wherein the first diameter is five to eight times greater than the first gap.

9 . The substrate support unit of claim 1 , wherein the first gap is greater than the third diameter by 10 mm or more.

10 . The substrate support unit of claim 5 , wherein the second diameter is six to eight times greater than the second gap.

11 . An apparatus for treating a substrate, the apparatus comprising:
a chamber having a process space inside; a support unit configured to support the substrate in the process space; a gas supply unit configured to supply gas into the process space; and a plasma source configured to generate plasma from the gas, wherein the support unit comprises: a dielectric plate on which the substrate is placed; a lower electrode disposed under the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, the through-hole having a third diameter, wherein the first gap increases farther away from the power supply rod.

12 . The apparatus of claim 11 , wherein an upper surface of the plate portion includes an inner area, which is a region closer to the through-hole, and an outer area, which is a region farther from the through-hole than the inner area, and wherein a height of the inner area is greater than a height of the outer area.

13 . The apparatus of claim 12 , wherein a lower surface of the lower electrode is formed to be flat.

14 . The apparatus of claim 13 , wherein an upper surface of the plate portion decreases in height from the inner area toward the outer area.

15 . The apparatus of claim 11 , wherein the ground member further includes a guide portion extending upward from an inner diameter of the through-hole by a predetermined length and spaced apart from the power supply rod by a second gap.

16 . The apparatus of claim 15 , wherein an upper end of the guide portion is formed to have a height greater than a height of the upper surface of the plate portion.

17 . The apparatus of claim 11 , wherein the lower electrode and the ground member are spaced apart from each other by the insulating member, and an air gap is formed between the lower electrode and the ground member, the air gap electrically insulating the ground member from the lower electrode.

18 . The apparatus of claim 11 , wherein the first diameter is five to eight times greater than the first gap.

19 . The apparatus of claim 11 , wherein the first gap is greater than the third diameter by 10 mm or more.

20 . The apparatus of claim 15 , wherein the second diameter is six to eight times greater than the second gap.

Assignees

• Semes Co Ltd

Inventors

• Son Hyoungkyu
• An Jong-Hwan
• Cho Jae Hyun
• Bae Min Keun
• Kim Dong Suk
• Kim Hyeon Gyu
• Galstyan Ogsen
• Lee Won Seok
• Kim Sung Je

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P72/72

  using electrostatic chucks · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H01J37/32577

  Electrical connecting means · CPC title