Hybrid modeling for film metrology

Patent metadata

Field	Value
Publication number	US-2024419885-A1
Application number	US-202318535103-A
Country	US
Kind code	A1
Filing date	Dec 11, 2023
Priority date	Jun 19, 2023
Publication date	Dec 19, 2024
Grant date	—

Abstract

A method of film thickness modeling includes receiving optical data of a sample having a top layer and at least one underlying layer. First simulation data are obtained by inputting the optical data into a multi-layer model. When a GOF of the first simulation data is below a threshold, a simulated thickness is obtained by inputting the optical data into a top-layer model that is substantially unaffected by the at least one underlying layer. A starting point of the thickness of the multi-layer model is adjusted based on the simulated thickness. Second simulation data are obtained by inputting the optical data into the multi-layer model. When the GOF of the second simulation data is below the threshold, the starting point of the thickness in the multi-layer model is re-adjusted, and third simulation data are obtained by inputting the optical data into the multi-layer model.

First claim

What is claimed is:

1 . A method of film thickness modeling, the method comprising:
receiving optical data of a sample, the sample having a plurality of layers including a top layer and at least one underlying layer; obtaining first simulation data by inputting the optical data into a multi-layer model that is configured to simulate a thickness of the top layer; when a goodness of fit (GOF) of the first simulation data is below a threshold, obtaining a simulated thickness by inputting the optical data into a top-layer model that is configured to simulate a thickness of the top layer and is substantially unaffected by the at least one underlying layer; adjusting a starting point of the thickness of the multi-layer model based on the simulated thickness; then obtaining second simulation data by inputting the optical data into the multi-layer model; and when a GOF of the second simulation data is above the threshold, outputting the thickness based on the second simulation data, or when the GOF of the second simulation data is below the threshold, (a) re-adjusting the starting point of the thickness in the multi-layer model, and then (b) obtaining third simulation data by inputting the optical data into the multi-layer model.

2 . The method of claim 1 , further comprising:
when a GOF of the third simulation data is below the threshold, receiving an adjusted multi-layer model in which a fixed constant of the multi-layer model is changed to a variable, a variable of the multi-layer model is changed to a fixed constant, or a combination thereof.

3 . The method of claim 2 , further comprising:
obtaining fourth simulation data by inputting the optical data into the adjusted multi-layer model.

4 . The method of claim 3 , further comprising:
when a GOF of the fourth simulation data is below the threshold, adjusting a starting point of the thickness of the adjusted multi-layer model based on the simulated thickness; and then obtaining fifth simulation data by inputting the optical data into the adjusted multi-layer model.

5 . The method of claim 4 , further comprising:
when a GOF of the fifth simulation data is below the threshold, (c) re-adjusting the starting point of the thickness of the adjusted multi-layer model; and (d) then obtaining sixth simulation data by inputting the optical data into the adjusted multi-layer model.

6 . The method of claim 5 , further comprising:
repeating (c) and (d) until a GOF of the sixth simulation data is above the threshold.

7 . The method of claim 2 , wherein:
in the multi-layer model, at least one thickness of the at least one underlying layer is a fixed constant, and in the adjusted multi-layer model, the at least one thickness of the at least one underlying layer is a variable.

8 . The method of claim 1 , further comprising:
repeating (a) and (b) until a GOF of the third simulation data is above the threshold.

9 . The method of claim 1 , wherein (a) comprises:
reducing the starting point of the thickness in the multi-layer model.

10 . The method of claim 5 , further comprising:
obtaining GOFs of the first, second, third, fourth, fifth and sixth simulation data with a cost function.

11 . The method of claim 2 , further comprising:
receiving a library comprising historic data and historic models including the multi-layer model and the adjusted multi-layer model.

12 . The method of claim 11 , further comprising:
choosing the multi-layer model from the library by calculating GOFs between the optical data and the historical data and identifying a largest GOF.

13 . The method of claim 11 , further comprising:
adding the optical data to the library when the optical data have a distance larger than a threshold distance from the historic data of the library.

14 . The method of claim 11 , wherein the optical data comprise reflectance spectra, the method further comprising:
reducing a library size by reducing the number of wavelengths in the reflectance spectra.

15 . The method of claim 1 , wherein the top-layer model comprises:
performing a Fourier Transform (FT) of the optical data to obtain an FT spectrum; and determining the thickness based on a primary peak of the FT spectrum which has a highest value in the FT spectrum.

16 . The method of claim 1 , wherein the optical data of the sample comprises optical data of reflectance versus wavelength.

17 . The method of claim 16 , wherein receiving the optical data of the sample comprises:
measuring the sample to obtain measurement data of intensity versus wavelength; and converting the measurement data of intensity versus wavelength to the optical data of reflectance versus wavelength.

18 . The method of claim 1 , wherein:
the multi-layer model is an optical spectral model.

19 . The method of claim 1 , wherein:
the top layer comprises silicon, and the at least one underlying layer includes silicon oxide and another layer.

20 . An apparatus, comprising:
a controller including a processor that is programmed to:
measure data associated with a plasma-related process using a plurality of sensors while executing the plasma-related process on a wafer;
receive optical data of a sample, the sample having a plurality of layers including a top layer and at least one underlying layer;
obtain first simulation data by inputting the optical data into a multi-layer model that is configured to simulate a thickness of the top layer;
when a goodness of fit (GOF) of the first simulation data is below a threshold, obtain a simulated thickness by inputting the optical data into a top-layer model that is configured to simulate a thickness of the top layer and is substantially unaffected by the at least one underlying layer;
adjust a starting point of the thickness of the multi-layer model based on the simulated thickness;
then obtain second simulation data by inputting the optical data into the multi-layer model; and
when a GOF of the second simulation data is above the threshold, output the thickness based on the second simulation data, or when the GOF of the second simulation data is below the threshold, (a) re-adjust the starting point of the thickness in the multi-layer model, and then (b) obtain third simulation data by inputting the optical data into the multi-layer model.

Assignees

• Tokyo Electron Ltd

Inventors

• Chen Yan
• Vuong Vi
• Tian Xinkang
• Machuca Francisco

Classifications

• G01B11/0633

  using one or more discrete wavelengths · CPC title

• G01B11/0641

  with measurement of polarization · CPC title

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title

• G01B11/0625 Primary

  with measurement of absorption or reflection · CPC title

• G06F2119/18

  Manufacturability analysis or optimisation for manufacturability · CPC title