Substrate bonding apparatus and method of manufacturing semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-2024242981-A1
Application number	US-202418415798-A
Country	US
Kind code	A1
Filing date	Jan 18, 2024
Priority date	Jan 18, 2023
Publication date	Jul 18, 2024
Grant date	—

Abstract

A substrate bonding apparatus may include a first bonding chuck including a first base and a first transformation plate, and a second including a second base facing the first bonding chuck. The first base may include a recess groove. The recess groove may be recessed inward from a surface on which the first transformation plate is mounted. The first transformation plate may include a first protrusion protruding outward from a first surface of the first transformation plate. A second surface of the first transformation plate may be opposite the first surface of the first transformation plate. The second surface of the first transformation plate may be configured to support a first substrate. The first transformation plate may be mounted on the first base in a manner allowing a distance between the first transformation plate and the first base to vary.

First claim

What is claimed is:

1 . A substrate bonding apparatus comprising:
a first bonding chuck configured to support a first substrate, the first bonding chuck including a first base and a first transformation plate; and a second bonding chuck configured to support a second substrate, the second bonding chuck including a second base facing the first bonding chuck, wherein the first base includes a recess groove, the recess groove is recessed inward from a surface of the first base on which the first transformation plate is mounted, the first transformation plate includes a first protrusion protruding outward from a first surface of the first transformation plate, a second surface of the first transformation plate is opposite the first surface of the first transformation plate, the second surface of the first transformation plate is configured to support the first substrate, and the first transformation plate is mounted on the first base in a manner allowing a distance between the first transformation plate and the first base to vary.

2 . The substrate bonding apparatus of claim 1 , wherein a part of the first protrusion is in the recess groove.

3 . The substrate bonding apparatus of claim 1 , wherein
the first protrusion is in a central area of the first transformation plate, and the central area of the first transformation plate is an area having a radius of 80 nm to 120 nm in a first direction from a center point in the first direction of the first surface of the first transformation plate, and the first direction corresponds to a width of the first transformation plate.

4 . The substrate bonding apparatus of claim 1 , wherein
a thickness of an area including the first protrusion of the first transformation plate is greater than a thickness of other areas of the first transformation plate by 1 mm to 2 mm.

5 . The substrate bonding apparatus of claim 1 , wherein
the first bonding chuck comprises a plurality of vacuum lines, and the plurality of vacuum lines are located on the surface of the first base on which the first transformation plate is mounted, the plurality of vacuum lines are configured to provide adsorptive power to the first transformation plate for mounting the first transformation plate onto the first base.

6 . The substrate bonding apparatus of claim 5 , wherein at least some of the plurality of vacuum lines are on the recess groove.

7 . The substrate bonding apparatus of claim 1 , wherein
the first bonding chuck comprises a plurality of first vacuum grooves configured to provide adsorptive power to adsorb the first substrate onto the first transformation plate, and the plurality of first vacuum grooves are in the second surface of the first transformation plate.

8 . The substrate bonding apparatus of claim 7 , wherein
the plurality of first vacuum grooves comprise an inner vacuum groove and an edge vacuum groove, the inner vacuum groove is in a central area of the second surface of the first transformation plate in a first direction corresponding to a width of the first transformation plate, the edge vacuum groove is in an edge area of the second surface of the first transformation plate in the first direction, and the substrate bonding apparatus is configured to adjust an adsorptive power applied to the inner vacuum groove and an adsorptive power applied to the edge vacuum groove independently from each other.

9 . The substrate bonding apparatus of claim 8 , wherein,
the substrate bonding apparatus is configured to release the adsorptive power applied to the inner vacuum groove and the edge vacuum groove in order from the inner vacuum groove to the edge vacuum groove, respectively, during spread of a bonding area between a central area of the first substrate and a central area of the second substrate.

10 . The substrate bonding apparatus of claim 8 , wherein
the inner vacuum groove has a circular shape, and the edge vacuum groove surrounds the inner vacuum groove and has a ring shape.

11 . The substrate bonding apparatus of claim 8 , wherein
the first bonding chuck comprises a plurality of dimples, and the plurality of dimples are inside the inner vacuum groove and configured to contact the first substrate.

12 . The substrate bonding apparatus of claim 11 , wherein
the plurality of dimples are apart from each other, and a distance between the plurality of dimples is less than a width of the edge vacuum groove.

13 . The substrate bonding apparatus of claim 7 , wherein
the second bonding chuck comprises a plurality of second vacuum grooves configured to provide adsorptive power to adsorb the second substrate onto the second base, and the plurality of second vacuum grooves are in a surface of the second base facing the first bonding chuck.

14 . The substrate bonding apparatus of claim 13 , wherein
the substrate bonding apparatus is configured to align the plurality of first vacuum grooves and the plurality of second vacuum grooves with each other during spread of bonding between the first substrate and the second substrate.

15 . The substrate bonding apparatus of claim 1 , wherein
the second bonding chuck comprises a second transformation plate, the second transformation plate comprises a first surface configured to support the second substrate and a second surface opposite the first surface, and the second surface of the second transformation plate is mounted onto the second base in a manner allowing a distance between the second transformation plate and the second base to vary.

16 . A substrate bonding apparatus comprising:
a first bonding chuck configured to support a first substrate, the first bonding chuck including a first base, a first transformation plate, and a pressure rod; and a second bonding chuck facing the first bonding chuck, the second bonding chuck configured to support a second substrate, wherein the first base includes a recess groove, the recess groove is recessed inward from a surface of the first base, the first transformation plate is mounted on the surface of the first base, the first transformation plate includes a first surface in contact with the first base in a manner allowing a distance between the first transformation plate and the first base to vary, a second surface of the first transformation plate is opposite the first surface of the first transformation plate, the second surface of the first transformation plate is configured to support the first substrate, a center of the first transformation plate includes a through hole extending from the first surface of the first transformation plate to the second surface of the first transformation plate, the pressure rod is mounted on the first base and configured to move in a vertical direction through the through hole of the first base and physically press and transform the first substrate when the first substrate is on the second surface of the first transformation plate, and the first transformation plate includes a plurality of areas having different thicknesses from each other.

17 . The substrate bonding apparatus of claim 16 , wherein
the first transformation plate comprises a first area and a second area, the second area surrounds the first area, a thickness of the first transformation plate in the first area is greater than a thickness of the first transformation plate in the second area, and the through hole is in the first area.

18 . The substrate bonding apparatus of claim 16 , wherein
the first transformation plate comprises a first area, a s

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jang Sehoon
• Baek Inhwa
• Kim Hyungku
• Yu Kibum
• Yun Jaesung
• Lee Yongin
• Jung Jaehyuk
• Jo Gwanghee
• Cho Youngjin

Classifications

• H10W80/301

  Bonding techniques, e.g. hybrid bonding · CPC title

• H10P72/0428 Primary

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10W99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title

• H10P72/78

  using vacuum or suction, e.g. Bernoulli chucks · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title