Cvd apparatus and method for cleaning chamber of cvd apparatus

Patent metadata

Field	Value
Publication number	US-2023069139-A1
Application number	US-202217896218-A
Country	US
Kind code	A1
Filing date	Aug 26, 2022
Priority date	Aug 30, 2021
Publication date	Mar 2, 2023
Grant date	—

Abstract

A CVD apparatus includes a chamber, a susceptor, an entry/takeout port for a substrate, and a gate valve provided at the entry/takeout port, in which the susceptor has a mounting plate and a support, the entry/takeout port is provided on a part of a side of the chamber, and is provided in a range from an inner bottom surface of the chamber to a position corresponding to the lower surface of the mounting plate when the susceptor is located at an upper end in the vertical direction, and the inner bottom surface of the chamber, the range from the inner bottom surface of the chamber to the position corresponding to the lower surface of the mounting plate when the susceptor is located at the upper end in the vertical direction, the lower surface of the mounting plate, and the outer side surface of the support are coated with ceramic liners.

First claim

What is claimed is:

1 . A CVD apparatus, comprising:
a chamber; a cleaning gas supply pipe that supplies a cleaning gas to the chamber; and an oxygen-containing gas supply pipe that supplies an oxygen-containing gas to the chamber, wherein the cleaning gas supply pipe has a first valve, the oxygen-containing gas supply pipe has a second valve, after the first valve is opened to supply the cleaning gas to the inside of the chamber, the second valve is opened to supply the oxygen-containing gas to the inside of the chamber with the first valve closed.

2 . The CVD apparatus according to claim 1 , further comprising;
a source gas supply pipe that supplies a source gas to the chamber, wherein the source gas supply pipe, the cleaning gas supply pipe, and the oxygen-containing gas supply pipe are each connected to the chamber via a gas supply pipe.

3 . The CVD apparatus according to claim 1 ,
wherein the cleaning gas supply pipe and the oxygen-containing gas supply pipe include a remote plasma unit.

4 . The CVD apparatus according to claim 1 ,
wherein the oxygen-containing gas contains oxygen and an inert gas.

5 . The CVD apparatus according to claim 1 ,
wherein the oxygen concentration of the oxygen-containing gas is in the range of 40% by volume or more and 60% by volume or less.

6 . The CVD apparatus according to claim 1 ,
wherein the cleaning gas is a fluorine-containing gas.

7 . The CVD apparatus according to claim 6 ,
wherein the fluorine-containing gas contains a fluorine compound gas and an inert gas.

8 . The CVD apparatus according to claim 1 ,
wherein a gas outlet is arranged along the inner wall surface of the chamber.

9 . A method for cleaning a chamber of a CVD apparatus, including the following steps;
a step of supplying a cleaning gas to the chamber; a step of stopping the supply of the cleaning gas to the chamber and supplying the oxygen-containing gas to the chamber.

10 . The method for cleaning a chamber of CVD apparatus according to claim 9 ,
the oxygen-containing gas is supplied at a flow rate equal to or higher than the flow rate of the cleaning gas.

11 . The method for cleaning a chamber of CVD apparatus according to claim 9 , the oxygen-containing gas is supplied for 50% or less of the supply time of the cleaning gas.

Assignees

• Asm Ip Holding Bv

Inventors

• Yanagisawa Ippei
• Nien Chiao Yin

Classifications

• H01J37/32862

  In situ cleaning of vessels and/or internal parts · CPC title

• C23C16/4405 Primary

  Cleaning of reactor or parts inside the reactor by using reactive gases · CPC title

• C23C16/4404 Primary

  Coatings or surface treatment on the inside of the reaction chamber or on parts thereof · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/32357

  Generation remote from the workpiece, e.g. down-stream · CPC title