Sequential precursor dosing in an ald multi-station/batch reactor
US-2015099372-A1 · Apr 9, 2015 · US
Method of manufacturing semiconductor device
US2019244790A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019244790-A1 |
| Application number | US-201816133247-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 17, 2018 |
| Priority date | Feb 6, 2018 |
| Publication date | Aug 8, 2019 |
| Grant date | — |
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- Title
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Abstract
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There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.
First claim
Opening claim text (preview).
1 . A method of manufacturing a semiconductor device, comprising: supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas, which is different from the inert gas, as a carrier gas of the second process gas without supplying the inert gas. 2 . The method of claim 1 , wherein the act of supplying the plasma is performed by setting an internal pressure of the process space to be lower than an internal pressure of the process space in the act of supplying the first process gas. 3 . The method of claim 2 , wherein in the act of supplying the plasma, the supply of the second process gas to the process space starts after the start of the supply of the active auxiliary gas in a plasma state to the process space. 4 . The method of claim 3 , wherein a cyclic process of repeating the act of supplying the first process gas and the act of supplying the plasma is performed. 5 . The method of claim 4 , wherein the first process gas is a precursor gas, and the second process gas is a reaction gas or a modifying gas. 6 . The method of claim 5 , wherein the inert gas is an N 2 gas, and the active auxiliary gas is an Ar gas. 7 . The method of claim 3 , wherein the first process gas is a precursor gas, and the second process gas is a reaction gas or a modifying gas. 8 . The method of claim 3 , wherein the inert gas is an N 2 gas, and the active auxiliary gas is an Ar gas. 9 . The method of claim 1 , wherein in the act of supplying the plasma, the supply of the second process gas to the process space starts after the start of the supply of the active auxiliary gas in a plasma state to the process space. 10 . The method of claim 9 , wherein a cyclic process of repeating the act of supplying the first process gas and the act of supplying the plasma is performed. 11 . The method of claim 10 , wherein the first process gas is a precursor gas, and the second process gas is a reaction gas or a modifying gas. 12 . The method of claim 11 , wherein the inert gas is an N 2 gas, and the active auxiliary gas is an Ar gas. 13 . The method of claim 9 , wherein the first process gas is a precursor gas, and the second process gas is a reaction gas or a modifying gas. 14 . The method of claim 9 , wherein the inert gas is an N 2 gas, and the active auxiliary gas is an Ar gas. 15 . The method of claim 1 , wherein a cyclic process of repeating the act of supplying the first process gas and the act of supplying the plasma is performed. 16 . The method of claim 15 , wherein the first process gas is a precursor gas, and the second process gas is a reaction gas or a modifying gas. 17 . The method of claim 15 , wherein the inert gas is an N 2 gas, and the active auxiliary gas is an Ar gas. 18 . The method of claim 1 , wherein the first process gas is a precursor gas, and the second process gas is a reaction gas or a modifying gas. 19 . The method of claim 18 , wherein the inert gas is an N 2 gas, and the active auxiliary gas is an Ar gas. 20 . The method of claim 1 , wherein the inert gas is an N 2 gas, and the active auxiliary gas is an Ar gas.
Assignees
Inventors
Classifications
the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title
the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title
deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title
- H10P14/6336Primary
in the presence of a plasma [PECVD] · CPC title
Gas supply means · CPC title
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Frequently asked questions
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- What does patent US2019244790A1 cover?
- There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.
- Who is the assignee on this patent?
- Kokusai Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P14/6336. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Aug 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).