Substrate processing apparatus and method of processing substrate

Patent metadata

Field	Value
Publication number	US-9818601-B1
Application number	US-201615278797-A
Country	US
Kind code	B1
Filing date	Sep 28, 2016
Priority date	Sep 28, 2016
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

A substrate processing apparatus includes a chamber, a stage provided in the chamber, a shower head in which a plurality of slits are formed, and which is opposed to the stage, an opening/closing part for opening and closing the plurality of slits, a first gas supply part which supplies a gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which is connected to a side wall of the chamber, and which supplies a gas to the space between the stage and the shower head.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a chamber;
a stage provided in the chamber;
a shower head in which a plurality of slits are formed, and which is opposed to the stage;
an opening/closing part for covering and uncovering the plurality of slits;
a first gas supply part which supplies a gas to a space between the stage and the shower head via the plurality of slits; and
a second gas supply part which is connected to a side wall of the chamber, and which supplies a gas to the space between the stage and the shower head.

2. The substrate processing apparatus according to claim 1 , wherein the first gas supply part has a first mass flow controller which adjusts a gas flow rate, and
the second gas supply part has a second mass flow controller which adjusts the gas flow rate, and a gate valve.

3. The substrate processing apparatus according to claim 1 , further comprising a controller which controls the opening/closing part, the first gas supply part and the second gas supply part.

4. A substrate processing apparatus comprising:
a chamber;
a stage provided in the chamber;
a shower head in which a plurality of slits are formed, and which is opposed to the stage;
an opening/closing part for opening and closing the plurality of slits;
a first gas supply part which supplies a gas to a space between the stage and the shower head via the plurality of slits; and
a second gas supply part which is connected to a side wall of the chamber, and which supplies a gas to the space between the stage and the shower head,
wherein the opening/closing part includes:
a shielding member in which a plurality of holes are provided; and
a rotating part which rotates the shielding member.

5. A substrate processing apparatus comprising:
a chamber;
a stage provided in the chamber;
a shower head in which a plurality of slits are formed, and which is opposed to the stage;
an opening/closing part for opening and closing the plurality of slits;
a first gas supply part which supplies a gas to a space between the stage and the shower head via the plurality of slits; and
a second gas supply part which is connected to a side wall of the chamber, and which supplies a gas to the space between the stage and the shower head,
wherein the opening/closing part includes:
a plate part having openings;
a plurality of projections provided on a lower surface of the plate part; and
a moving part which vertically moves the plate part, and

wherein the plurality of projections are fitted in the plurality of slits when the plurality of slits are closed.

6. The substrate processing apparatus according to claim 5 , wherein in a state where the slits are closed by fitting the plurality of projections in the slits, lower surfaces of the projections and a lower surface of the shower head form one flat surface.

7. The substrate processing apparatus according to claim 5 , wherein in a state where the slits are closed by fitting the plurality of projections in the slits, the openings are closed by the shower head.

Assignees

• Asm Ip Holding Bv

Inventors

• Tokunaga Masaki
• Zaitsu Masaru
• Fukazawa Atsuki

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title