Substrate edge ring that extends process environment beyond substrate diameter

Patent metadata

Field	Value
Publication number	US-2022293397-A1
Application number	US-202117198141-A
Country	US
Kind code	A1
Filing date	Mar 10, 2021
Priority date	Mar 10, 2021
Publication date	Sep 15, 2022
Grant date	—

Abstract

Embodiments of substrates supports for use in process chambers are provided herein. In some embodiments, a substrate support includes: a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes a chucking electrode; an insert ring disposed in the annular groove of the dielectric plate; and an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring.

First claim

1 . A substrate support for use in a substrate processing chamber, comprising:
a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes one or more chucking electrodes; an insert ring disposed in the annular groove of the dielectric plate; and an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring.

2 . The substrate support of claim 1 , wherein at least one of:
the edge ring is made of silicon, silicon carbide, silicon dioxide, or silicon nitride; or the insert ring is made of silicon, silicon nitride, silicon carbide, or silicon oxide.

3 . The substrate support of claim 1 , wherein the dielectric plate includes one or more backside gas channels fluidly coupled to an interface between the dielectric plate and the edge ring.

4 . The substrate support of claim 1 , wherein the insert ring and the edge ring comprise a unitary body.

5 . The substrate support of claim 1 , wherein at least one of:
an inner diameter of the edge ring is about 297 mm to about 302 mm; or an outer diameter of the edge ring is about 350 mm to about 450 mm.

6 . The substrate support of claim 1 , further comprising a cooling plate coupled to a second side of the dielectric plate, opposite the first side, wherein the cooling plate includes cooling channels configured to circulate a coolant.

7 . The substrate support of claim 1 , dielectric plate further comprising a heating element disposed in the dielectric plate.

8 . The substrate support of claim 1 , wherein a thickness of the edge ring is about 650 micrometers to about 1300 micrometers.

9 . The substrate support of claim 1 , wherein a thickness of the insert ring is about 3 to about 11 millimeters.

10 . The substrate support of claim 1 , wherein the edge ring comprises a flat circular disk with a central opening.

11 . A substrate support for use in a substrate processing chamber, comprising:
a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side and a second side opposite the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes one or more chucking electrodes; an insert ring disposed in the annular groove of the dielectric plate, wherein an upper surface of the insert ring is coplanar with an upper surface of the dielectric plate; and an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring.

12 . The substrate support of claim 11 , wherein the one or more chucking electrodes comprise an upper electrode, a lower electrode, and a plurality of posts coupling the upper electrode to the lower electrode.

13 . The substrate support of claim 12 , wherein the one or more chucking electrodes extend radially outward of the annular groove and beneath the edge ring.

14 . The substrate support of claim 11 , further comprising a gas distribution channel extending from the second side to the first side of the dielectric plate.

15 . The substrate support of claim 11 , wherein the edge ring is made of a different material than the insert ring.

16 . A process chamber for processing a substrate, comprising:
a chamber body having a substrate support disposed within an inner volume of the chamber body, wherein the substrate support includes:
a cooling plate;
a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes one or more chucking electrodes;
an insert ring disposed in the annular groove of the dielectric plate; and
an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring, and wherein the dielectric plate includes gas distribution channels disposed below the edge ring.

17 . The process chamber of claim 16 , further comprising a power supply configured to provide power to both the substrate and the edge ring.

18 . The process chamber of claim 16 , further comprising a quartz ring disposed about the dielectric plate, wherein the quartz ring is configured to support an outer edge of the edge ring.

19 . The process chamber of claim 16 , further comprising an edge ring lift mechanism for selectively raising or lowering the edge ring via one or more lift pins.

20 . The process chamber of claim 19 , wherein the one or more lift pins are configured to extend through the dielectric plate.

Assignees

• Applied Materials Inc

Inventors

• Rice Michael R
• Collins Kenneth S
• Carducci James David
• Rauf Shahid
• Ramaswamy Kartik

Classifications

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/72

  using electrostatic chucks · CPC title