Permanent secondary erosion containment for electrostatic chuck bonds
US-10340171-B2 · Jul 2, 2019 · US
US10910195B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10910195-B2 |
| Application number | US-201715399244-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 5, 2017 |
| Priority date | Jan 5, 2017 |
| Publication date | Feb 2, 2021 |
| Grant date | Feb 2, 2021 |
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A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. An outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of the ceramic layer extends below the edge ring.
Opening claim text (preview).
What is claimed is: 1. A substrate support for supporting a substrate in a substrate processing system, the substrate support comprising: a baseplate; and a ceramic layer arranged above the baseplate, an outer perimeter of the ceramic layer being surrounded by an edge ring; wherein an outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of an uppermost surface of the ceramic layer extends below the edge ring, and wherein the ceramic layer includes (i) an annular groove arranged in the uppermost surface of the ceramic layer and (ii) an insert arranged in the annular groove, and wherein the insert is a same ceramic material as the ceramic layer and is configured to be placed in and removed from the annular groove. 2. The substrate support of claim 1 , wherein the insert is positioned at least partially below the edge ring. 3. The substrate support of claim 1 , wherein the insert extends from below the edge ring to a portion of the ceramic layer arranged to support a substrate. 4. The substrate support of claim 1 , wherein the substrate support is configured to support a 300 mm substrate, and wherein the ceramic layer has an outer radius of at least 151.5 mm. 5. The substrate support of claim 1 , wherein the substrate support is configured to support a 450 mm substrate, and wherein the ceramic layer has an outer radius of at least 226.5 mm. 6. The substrate support of claim 1 , wherein the substrate support is configured to support a substrate having a diameter d mm, and wherein, when the substrate is arranged on the ceramic layer, (i) a manufacturing variance associated with the substrate is v mm, and (ii) the ceramic layer has an outer radius greater than or equal to a sum of (d+v)/2 and a predetermined offset. 7. A substrate support for supporting a substrate in a substrate processing system, the substrate support comprising: a baseplate; a ceramic layer arranged above the baseplate; and an edge ring arranged around an outer perimeter of the ceramic layer, wherein an outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of an uppermost surface of the ceramic layer extends below the edge ring, and wherein the ceramic layer includes (i) an annular groove arranged in the uppermost surface of the ceramic layer and (ii) an insert arranged in the annular groove, and wherein the insert is a same ceramic material as the ceramic layer and is configured to be placed in and removed from the annular groove. 8. The substrate support of claim 7 , wherein the insert is positioned at least partially below the edge ring. 9. The substrate support of claim 7 , wherein the insert extends from below the edge ring to a portion of the ceramic layer arranged to support a substrate. 10. The substrate support of claim 7 , wherein the substrate support is configured to support a 300 mm substrate, and wherein the ceramic layer has an outer radius of at least 151.5 mm. 11. The substrate support of claim 7 , wherein the substrate support is configured to support a 450 mm substrate, and wherein the ceramic layer has an outer radius of at least 226.5 mm. 12. The substrate support of claim 7 , wherein the substrate support is configured to support a substrate having a diameter d mm, and wherein, when the substrate is arranged on the ceramic layer, (i) a manufacturing variance associated with the substrate is v mm, and (ii) the ceramic layer has an outer radius greater than or equal to a sum of (d+v)/2 and a predetermined offset.
mainly by convection · CPC title
mainly by conduction · CPC title
characterised by a coating, a hardness or a material · CPC title
characterised by edge profile or support profile · CPC title
using electrostatic chucks · CPC title
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