Methods for depositing a titanium aluminum carbide film structure on a substrate and related semiconductor structures

Patent metadata

Field	Value
Publication number	US-2022051895-A1
Application number	US-202117395593-A
Country	US
Kind code	A1
Filing date	Aug 6, 2021
Priority date	Aug 11, 2020
Publication date	Feb 17, 2022
Grant date	—

Abstract

Methods for depositing a titanium aluminum carbide (TiAlC) film structure on a substrate are disclosed. The methods may include: depositing a first TiAlC film on a substrate utilizing a first cyclical deposition process, and depositing a second TiAlC film over the first TiAlC film utilizing a second cyclical deposition process. Semiconductor structures including titanium aluminum carbide (TiAlC) film structures deposited by the methods of the disclosure are also disclosed.

First claim

What is claimed is:

1 . A method for depositing a titanium aluminum carbide (TiAlC) film structure on a substrate, the method comprising:
depositing a first TiAlC film on the substrate utilizing at least one first unit deposition cycle of a first cyclical deposition process at a first growth rate per cycle; and depositing a second TiAlC film over the first TiAlC film utilizing at least one second unit deposition cycle of a second cyclical deposition process at a second growth rate per cycle; wherein the first growth rate per cycle is greater than the second growth rate per cycle.

2 . The method of claim 1 , wherein the first unit deposition cycle and the second unit deposition cycle comprise: contacting the substrate with a titanium precursor, and contacting the substrate with a metalorganic aluminum precursor.

3 . The method of claim 2 , wherein the first cyclical deposition process utilizes a first metalorganic aluminum precursor as the metalorganic aluminum precursor and the second cyclical deposition process utilizes a second metalorganic aluminum precursor different from the first metalorganic aluminum precursor as the metalorganic aluminum precursor.

4 . The method of claim 3 , wherein the first metalorganic aluminum precursor is more reactive than the second metalorganic aluminum precursor.

5 . The method of claim 3 , wherein the first metalorganic aluminum precursor contains a greater number of carbon atoms than the second metalorganic aluminum precursor.

6 . The method of claim 3 , wherein the first metalorganic aluminum precursor comprises triethylaluminum (TEA).

7 . The method of claim 3 , wherein the second metalorganic aluminum precursor comprises trimethylaluminum (TMA).

8 . The method of claim, 1 wherein the first TiAlC film has a greater atomic-% of aluminum than the second TiAlC film.

9 . The method of claim 1 , wherein the first TiAlC film has an atomic-% of aluminum between 20 atomic-% and 50 atomic-%.

10 . The method of claim 9 , wherein the first TiAlC film has an atomic-% of aluminum between 30 atomic-% and 40 atomic-%/

11 . The method of claim 1 , wherein the second TiAlC film has an atomic-% of aluminum between 5 atomic-% and 15 atomic-%.

12 . The method of claim 1 , wherein the first growth rate per cycle is between 5 Å/cycle and 10 Å/cycle.

13 . The method of claim 1 , wherein the second growth rate per cycle is between 2 Å/cycle and 4 Å/cycle.

14 . The method of claim 1 , wherein the first TiAlC film has an average surface roughness (Ra) of less than 3 Å.

15 . The method of claim 1 , wherein the second TiAlC film has an average surface roughness (Ra) of less than 3 Å.

16 . The method of claim 1 , wherein the second TiAlC film is deposited directly over the first TiAlC film.

17 . The method of claim 1 , wherein a deposition surface of the substrate comprises a high-k dielectric material and the first TiAlC film is deposited over the high-k dielectric film.

18 . The method of claim 17 , wherein the first TiAlC film is deposited directly over the high-k dielectric material.

19 . The method of claim 17 , further comprising depositing a transition metal nitride film directly over the high-k dielectric material prior to depositing the first TiAlC film directly over the transition metal nitride film.

20 . The method of claim 1 , wherein the titanium aluminum carbide (TiAlC) film structures has an average film thickness of between 20 Å and 50 Å.

21 . The method of claim 1 , wherein the deposition temperature is less than 450° C.

22 . The method of claim 1 , wherein the titanium aluminum carbide (TiAlC) film structure comprises at least a portion of a metal gate stack disposed on or over a semiconductor device structure.

23 . The method of claim 22 , wherein the semiconductor device structure comprises a gate all around (GAA) transistor.

24 . A gate electrode including a titanium aluminum carbide (TiAlC) film structure deposited according to the method of claim 1 .

25 . A semiconductor deposition apparatus configured to perform the method of claim 1 .

Assignees

• Asm Ip Holding Bv

Inventors

• Raisanen Petri
• Shero Eric
• Johnson Ward
• Li Dong

Classifications

• H10D64/01318 Primary

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10D64/667

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671) · CPC title

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title

• H10D30/0223

  having source and drain regions or source and drain extensions self-aligned to sides of the gate · CPC title

• C23C16/32 Primary

  Carbides · CPC title