Structures including metal carbide material, devices including the structures, and methods of forming same

Patent metadata

Field	Value
Publication number	US-2016376704-A1
Application number	US-201514752712-A
Country	US
Kind code	A1
Filing date	Jun 26, 2015
Priority date	Jun 26, 2015
Publication date	Dec 29, 2016
Grant date	—

Abstract

Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

First claim

We claim:

1 . A method of forming a thin-film structure, the method comprising the steps of:
providing a substrate; depositing a first metal carbide layer using a first precursor and a second precursor; and depositing a second metal carbide layer using a third precursor and a fourth precursor, wherein at least one of the third precursor and the fourth precursor differs from both the first precursor and the second precursor.

2 . The method of claim 1 , wherein the first layer comprises titanium.

3 . The method of claim 1 , wherein the second layer comprises titanium.

4 . The method of claim 1 , wherein the first layer comprises aluminum.

5 . The method of claim 1 , wherein the second layer comprises aluminum.

6 . The method of claim 1 , wherein the first precursor comprises one or more of a metal halide, metal bromide, or metal iodide.

7 . The method of claim 1 , wherein the second precursor comprises one or more compounds selected from the group consisting of trimethylaluminum (TMA), triethylaluminum (TEA), dimethylaluminum hydride (DMAH), dimethylethylaminealane (DMEAA), and trimethylaminealane (TEAA), N-methylpyrroridinealane (MPA).

8 . The method of claim 1 , wherein the first precursor and the third precursor are the same.

9 . The method of claim 1 , wherein the fourth precursor comprises an organometallic precursor.

10 . The structure of claim 1 , wherein electrical properties of a device are manipulated by varying an amount of one or more of the first metal carbide layer and the second metal carbide layer.

11 . A method of forming a thin-film structure, the method comprising the steps of:
depositing a first metal carbide layer having a first composition overlying a substrate; and depositing a second metal carbide layer having a second composition overlying the first metal carbide layer, wherein the first composition is different from the second composition.

12 . The method of claim 11 , wherein the first metal carbide layer is formed using a first organometallic precursor and a first metal halide precursor.

13 . The method of claim 12 , wherein the second metal carbide layer is formed using a second organometallic precursor and the first metal halide precursor.

14 . The method of claim 12 , wherein the first organometallic precursor is selected from the group consisting of trimethylaluminum (TMA), triethylaluminum (TEA), dimethylaluminum hydride (DMAH), dimethylethylaminealane (DMEAA), and trimethylaminealane (TEAA), N-methylpyrroridinealane (MPA).

15 . The method of claim 13 , wherein the second organometallic precursor is selected from the group consisting of tritertbutylaluminum (TTBA).

16 . The method of claim 11 , further comprising the steps of forming one or more additional metal carbide layers.

17 . A method of forming a thin-film structure, the method comprising the steps of:
depositing a first metal carbide material onto a surface of a substrate using a first process; and depositing a second metal carbide material onto the first metal carbide material using a second process.

18 . A thin-film structure comprising:
a substrate; a first metal carbide material formed using a first process overlying the substrate; and a second metal carbide material formed using a second process overlying the first metal carbide material.

19 . The thin-film structure of claim 18 , wherein the first metal carbide and the second metal carbide comprise TiAlC.

20 . The thin-film structure of claim 18 , further comprising a layer of TiN.

Assignees

• Asm Ip Holding Bv

Inventors

• Raisanen Petri
• Givens Michael
• Shero Eric James

Classifications

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• C23C16/32

  Carbides · CPC title

• C23C16/45525 Primary

  Atomic layer deposition [ALD] · CPC title

• H10D62/8162

  having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation · CPC title

• H10D64/691 Primary

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title