Substrate liquid processing apparatus and substrate liquid processing method

Patent metadata

Field	Value
Publication number	US-2022049356-A1
Application number	US-201917312482-A
Country	US
Kind code	A1
Filing date	Dec 3, 2019
Priority date	Dec 14, 2018
Publication date	Feb 17, 2022
Grant date	—

Abstract

A substrate liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid to an upper surface of the substrate held by the substrate holder; a cover body configured to cover the upper surface of the substrate held by the substrate holder; and a gas supply configured to supply an inert gas to a space between the substrate held by the substrate holder and the cover body, the gas supply having a gas supply opening through which the inert gas is discharged. An opening direction of the gas supply opening is directed to a direction other than the upper surface of the substrate held by the substrate holder.

First claim

1 . A substrate liquid processing apparatus, comprising:
a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid to an upper surface of the substrate held by the substrate holder; a cover body configured to cover the upper surface of the substrate held by the substrate holder; and a gas supply configured to supply an inert gas to a space between the substrate held by the substrate holder and the cover body, the gas supply having a gas supply opening through which the inert gas is discharged, wherein an opening direction of the gas supply opening is directed to a direction other than the upper surface of the substrate held by the substrate holder.

2 . The substrate liquid processing apparatus of claim 1 ,
wherein the cover body has a ceiling member extended horizontally; a sidewall member extended downwards from the ceiling member; and a heater provided in the ceiling member and configured to generate heat.

3 . The substrate liquid processing apparatus of claim 2 ,
wherein the gas supply is provided at the sidewall member.

4 . The substrate liquid processing apparatus of claim 2 ,
wherein the gas supply is provided at the ceiling member.

5 . The substrate liquid processing apparatus of claim 2 ,
wherein the opening direction is directed to the ceiling member.

6 . The substrate liquid processing apparatus of claim 2 , further comprising:
an airflow guide member, having a guide surface exposed to the space, provided at a corner between the ceiling member and the sidewall member, wherein the opening direction is directed to the guide surface.

7 . The substrate liquid processing apparatus of claim 2 , further comprising:
a flange extended from the sidewall member toward a side of the substrate holder.

8 . The substrate liquid processing apparatus of claim 1 ,
wherein the opening direction is a horizontal direction.

9 . The substrate liquid processing apparatus of claim 1 ,
wherein the opening direction is directed from an outer peripheral side of the substrate toward an inside of the substrate.

10 . The substrate liquid processing apparatus of claim 1 ,
wherein the opening direction is directed from an inside of the substrate toward an outer peripheral side of the substrate.

11 . The substrate liquid processing apparatus of claim 1 ,
wherein the gas supply opening includes multiple gas supply openings, the substrate holder rotates the substrate around a rotation axis in a forward circumferential direction, two or more extension lines which respectively pass through centers of two or more gas supply openings of the multiple gas supply openings and which are respectively extended linearly in opening directions of the two or more gas supply openings do not pass through the rotation axis, and the opening directions of the two or more gas supply openings are set to follow one of the forward circumferential direction and a reverse circumferential direction opposite to the forward circumferential direction.

12 . The substrate liquid processing apparatus of claim 11 ,
wherein the opening directions of the two or more gas supply openings are set to follow the forward circumferential direction.

13 . The substrate liquid processing apparatus of claim 1 ,
wherein the inert gas is helium.

14 . A substrate liquid processing method, comprising:
supplying a processing liquid to an upper surface of a substrate held by a substrate holder; covering the upper surface of the substrate held by the substrate holder with a cover body located at a processing position; and discharging an inert gas from a gas supply opening in a state where the processing liquid is placed on the upper surface and supplying the inert gas to a space between the substrate held by the substrate holder and the cover body located at the processing position, wherein an opening direction of the gas supply opening is directed to a direction other than the upper surface of the substrate held by the substrate holder.

15 . The substrate liquid processing method of claim 14 ,
wherein the cover body has a ceiling member extended horizontally and a sidewall member extended downwards from the ceiling member, and the inert gas is gathered in a space defined by the ceiling member and the sidewall member before the cover body is located at the processing position.

16 . The substrate liquid processing method of claim 14 ,
wherein the gas supply opening discharges the inert gas before the cover body is located at the processing position and while the cover body located at the processing position covers the upper surface, and the inert gas whose flow rate is higher than that of the inert gas discharged from the gas supply opening while the cover body is located at the processing position is discharged from the gas supply opening before the cover body is located at the processing position.

17 . The substrate liquid processing method of claim 14 , further comprising:
supplying a cleaning liquid, which is different from the processing liquid, to the upper surface, wherein the inert gas is discharged from the gas supply opening in a state where the cleaning liquid is placed on the upper surface.

18 . The substrate liquid processing method of claim 17 ,
wherein the cover body has a ceiling member extended horizontally and a sidewall member extended downwards from the ceiling member, and the inert gas is gathered in a space defined by the ceiling member and the sidewall member before the cleaning liquid is supplied onto the upper surface.

19 . The substrate liquid processing method of claim 17 ,
wherein the gas supply opening discharges the inert gas while the cleaning liquid is placed on the upper surface and while the processing liquid is placed on the upper surface, and the inert gas whose flow rate is higher than that of the inert gas discharged from the gas supply opening while the processing liquid is placed on the upper surface is discharged from the gas supply opening while the cleaning liquid is placed on the upper surface.

Assignees

• Tokyo Electron Ltd

Inventors

• Kaneko Satoshi
• Motomatsu Kazuki

Classifications

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C23C18/1882

  Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers · CPC title

• C23C18/36

  using hypophosphites · CPC title

• C23C18/163 Primary

  Supporting devices for articles to be coated · CPC title